Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/80596
Title: InGaP grown on Ge (100) by molecular beam epitaxy: a spectroscopic ellipsometry study
Authors: D’Costa, Vijay Richard
Loke, Wan Khai
Zhou, Qian
Yoon, Soon Fatt
Yeo, Yee-Chia
Keywords: Electrical and Electronic Engineering
Semiconductor Science and Technology
Issue Date: 2016
Source: D’Costa, V. R., Loke, W. K., Zhou, Q., Yoon, S. F., & Yeo, Y.-C. (2016). InGaP grown on Ge (100) by molecular beam epitaxy: a spectroscopic ellipsometry study. Semiconductor Science and Technology, 31(3), 035022-.
Series/Report no.: Semiconductor Science and Technology
Abstract: We investigated the optical properties of disordered In0.52Ga0.48P alloys by spectroscopic ellipsometry in the far-infrared to ultraviolet energy range (0.037–5.1 eV). The alloys were grown on Ge (100) substrate by solid-source molecular beam epitaxy. The far-infrared dielectric function reveals two absorption peaks that can be attributed to InP- and GaP-like vibrational modes. The visible-UV dielectric function of In0.52Ga0.48P alloys nearly lattice-matched to Ge shows the critical points E 0, E 1, and E 2, energies of which are determined using a derivative analysis. A weak transition that can be identified as the E 1 + Δ1 critical point is revealed. The vibrational frequencies and the transition energies in In0.52Ga0.48P are lower relative to In0.49Ga0.51P lattice-matched to GaAs. The downward shifts in E 0 and phonons can be estimated using the compositional dependence of E 0 and phonons of bulk alloys.
URI: https://hdl.handle.net/10356/80596
http://hdl.handle.net/10220/40554
ISSN: 0268-1242
DOI: 10.1088/0268-1242/31/3/035022
Rights: © 2016 IOP Publishing Ltd. This is the author created version of a work that has been peer reviewed and accepted for publication by Semiconductor Science and Technology, IOP Publishing Ltd. It incorporates referee’s comments but changes resulting from the publishing process, such as copyediting, structural formatting, may not be reflected in this document. The published version is available at: [http://dx.doi.org/10.1088/0268-1242/31/3/035022].
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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