Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/80596
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dc.contributor.authorD’Costa, Vijay Richarden
dc.contributor.authorLoke, Wan Khaien
dc.contributor.authorZhou, Qianen
dc.contributor.authorYoon, Soon Fatten
dc.contributor.authorYeo, Yee-Chiaen
dc.date.accessioned2016-05-20T04:18:20Zen
dc.date.accessioned2019-12-06T13:52:56Z-
dc.date.available2016-05-20T04:18:20Zen
dc.date.available2019-12-06T13:52:56Z-
dc.date.issued2016en
dc.identifier.citationD’Costa, V. R., Loke, W. K., Zhou, Q., Yoon, S. F., & Yeo, Y.-C. (2016). InGaP grown on Ge (100) by molecular beam epitaxy: a spectroscopic ellipsometry study. Semiconductor Science and Technology, 31(3), 035022-.en
dc.identifier.issn0268-1242en
dc.identifier.urihttps://hdl.handle.net/10356/80596-
dc.description.abstractWe investigated the optical properties of disordered In0.52Ga0.48P alloys by spectroscopic ellipsometry in the far-infrared to ultraviolet energy range (0.037–5.1 eV). The alloys were grown on Ge (100) substrate by solid-source molecular beam epitaxy. The far-infrared dielectric function reveals two absorption peaks that can be attributed to InP- and GaP-like vibrational modes. The visible-UV dielectric function of In0.52Ga0.48P alloys nearly lattice-matched to Ge shows the critical points E 0, E 1, and E 2, energies of which are determined using a derivative analysis. A weak transition that can be identified as the E 1 + Δ1 critical point is revealed. The vibrational frequencies and the transition energies in In0.52Ga0.48P are lower relative to In0.49Ga0.51P lattice-matched to GaAs. The downward shifts in E 0 and phonons can be estimated using the compositional dependence of E 0 and phonons of bulk alloys.en
dc.description.sponsorshipNRF (Natl Research Foundation, S’pore)en
dc.format.extent21 p.en
dc.language.isoenen
dc.relation.ispartofseriesSemiconductor Science and Technologyen
dc.rights© 2016 IOP Publishing Ltd. This is the author created version of a work that has been peer reviewed and accepted for publication by Semiconductor Science and Technology, IOP Publishing Ltd. It incorporates referee’s comments but changes resulting from the publishing process, such as copyediting, structural formatting, may not be reflected in this document. The published version is available at: [http://dx.doi.org/10.1088/0268-1242/31/3/035022].en
dc.subjectElectrical and Electronic Engineeringen
dc.subjectSemiconductor Science and Technologyen
dc.titleInGaP grown on Ge (100) by molecular beam epitaxy: a spectroscopic ellipsometry studyen
dc.typeJournal Articleen
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen
dc.identifier.doi10.1088/0268-1242/31/3/035022en
dc.description.versionAccepted versionen
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