Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/80598
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dc.contributor.authorAsundi, Anand Krishnaen
dc.contributor.authorNg, Chi Sengen
dc.contributor.editorPostek, Michael T.en
dc.date.accessioned2017-03-16T03:41:08Zen
dc.date.accessioned2019-12-06T13:52:58Z-
dc.date.available2017-03-16T03:41:08Zen
dc.date.available2019-12-06T13:52:58Z-
dc.date.issued2011en
dc.identifier.citationNg, C. S., & Asundi, A. K. (2011). Rapid defect detections of bonded wafer using near infrared polariscope. Proceedings of SPIE - Instrumentation, Metrology, and Standards for Nanomanufacturing, Optics, and Semiconductors V, 81050P-.en
dc.identifier.urihttps://hdl.handle.net/10356/80598-
dc.description.abstractIn modern field of microelectronics and MEMS, wafer bonding has emerged as an important processing step in wide range of manufacturing applications. During the manufacturing process, even in the modern clean room, small defects result from trapped particles and gas bubbles exist at bonded interface. Defects and trapped particles may exist on the top and bottom of the wafers, or at the interface of bonded wafer pair. These inclusions will generate high stress around debond region at the wafers bonded interface. In this paper, inspection at the bonded interface will be the interest of investigation. Since silicon wafer is opaque to visible light, defect detection at the bonded interface of silicon wafer is not possible. Due to the fact that silicon wafer is transparent to wavelength greater than 1150nm, an Near Infrared Polariscope which has showed some promises on residual stress measurement on silicon devices has been adapted and developed. This method is based on the well known photoelastic principles, where the stress variations are measured based on the changes of light propagation velocity in birefringence material. The results are compared and contrast with conventional Infrared Transmission Imaging tool (IRT) which is widely used to inspect the bonded silicon wafer. In this research, the trapped particles that are not visible via conventional infrared transmission method are identified via the generated residual stress pattern. The magnitude of the residual stress fields associated with each defect is examined qualitatively and quantitatively. The stress field generated at the wafers bonded interface will looks like a 'butterfly' pattern. Wafer pairs Pyrex-Si and Si-Si bonded interface will be examined.en
dc.format.extent11 p.en
dc.language.isoenen
dc.rights© 2011 Society of Photo-optical Instrumentation Engineers (SPIE). This paper was published in Proceedings of SPIE - Instrumentation, Metrology, and Standards for Nanomanufacturing, Optics, and Semiconductors V and is made available as an electronic reprint (preprint) with permission of Society of Photo-optical Instrumentation Engineers (SPIE). The published version is available at: [http://dx.doi.org/10.1117/12.894402]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.en
dc.subjectBonded interfaceen
dc.subjectNear Infrareden
dc.titleRapid defect detections of bonded wafer using near infrared polariscopeen
dc.typeConference Paperen
dc.contributor.schoolSchool of Mechanical and Aerospace Engineeringen
dc.contributor.conferenceProceedings of SPIE - Instrumentation, Metrology, and Standards for Nanomanufacturing, Optics, and Semiconductors Ven
dc.identifier.doi10.1117/12.894402en
dc.description.versionPublished versionen
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