Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/80599
Title: Whole field curvature and residual stress determination of silicon wafers by reflectometry
Authors: Ng, Chi Seng
Asundi, Anand Krishna
Keywords: Reflectometry
Curvature measurement
Issue Date: 2011
Source: Ng, C. S., & Asundi, A. K. (2011). Whole field curvature and residual stress determination of silicon wafers by reflectometry. Proceedings of SPIE - Instrumentation, Metrology, and Standards for Nanomanufacturing, Optics, and Semiconductors V, 81050N-.
Abstract: Reflectometry, a simple whole-field curvature measurement system using a novel computer aided phase shift reflection grating method has been improved to certain extend. The similar system was developed from our earlier works on Computer Aided Moiré Methods and Novel Techniques in Reflection Moiré, Experimental Mechanics (1994) in which novel structured light approach was shown for surface slope and curvature measurement. This method uses similar technology but coupled with a novel phase shift system to accurately measure surface profile, slope and curvature. In our previous paper, "Stress Measurement of thin wafer using Reflection Grating Method", the surface curvature and residual stresses were evaluated using the versatility of the proposed system.. The curvature of wafers due to the deposition of backside metallization was evaluated and compared with a commercially stress measurement system from KLA-Tencor. In this paper, some aspects of the work are extended. Our proposed system is calibrated using a reference flat mirror and spherical mirror certified by Zygo Corporation. The mirrors together with the camera calibration toolbox allow the system to acquire measurement accuracy that is demanded by semiconductor industry. Finally, the results obtained from Reflectometry are compared and contrast with results from KLA Tencor System.
URI: https://hdl.handle.net/10356/80599
http://hdl.handle.net/10220/42172
DOI: 10.1117/12.894396
Rights: © 2011 Society of Photo-optical Instrumentation Engineers (SPIE). This paper was published in Proceedings of SPIE - Instrumentation, Metrology, and Standards for Nanomanufacturing, Optics, and Semiconductors V and is made available as an electronic reprint (preprint) with permission of Society of Photo-optical Instrumentation Engineers (SPIE). The published version is available at: [http://dx.doi.org/10.1117/12.894396]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:MAE Conference Papers

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