Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/80638
Title: Black Phosphorus Nanosheets: Synthesis, Characterization and Applications
Authors: Eswaraiah, Varrla
Zeng, Qingsheng
Long, Yi
Liu, Zheng
Keywords: anisotropy
bandgaps
black phosphorus
electronics
optoelectronics
Issue Date: 2016
Source: Eswaraiah,V., Zeng, Q., Long, Y., & Liu, Z. (2016). Black Phosphorus Nanosheets: Synthesis, Characterization and Applications. Small, 12(26), 3480–3502.
Series/Report no.: Small
Abstract: Black phosphorus (BP) is an emerging two-dimensional (2D) material with a natural bandgap, which has unique anisotropy and extraordinary physical properties. Due to its puckered structure, BP exhibits strong in-plane anisotropy unlike other layered materials. The bandgap tunability of BP enables a wide range of ultrafast electronics and high frequency optoelectronic applications ranging from telecommunications to thermal imaging covering the nearly entire electromagnetic spectrum, whereas no other 2D material has this functionality. Here, recent advances in the synthesis, fabrication, anisotropic physical properties, and BP-based devices including field effect transistors (FETs) and photodetectors, are discussed. Recent passivation approaches to address the degradation of BP, which is one of the main challenges to bring this material into real world applications, are also introduced. Finally, a comment is made on the recent developments in other emerging applications, future outlook and challenges ahead in BP research.
URI: https://hdl.handle.net/10356/80638
http://hdl.handle.net/10220/40618
ISSN: 1613-6810
DOI: 10.1002/smll.201600032
Schools: School of Electrical and Electronic Engineering 
School of Materials Science & Engineering 
Rights: © 2016 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim. This is the author created version of a work that has been peer reviewed and accepted for publication by Small, Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim. It incorporates referee’s comments but changes resulting from the publishing process, such as copyediting, structural formatting, may not be reflected in this document. The published version is available at: [http://dx.doi.org/10.1002/smll.201600032].
Fulltext Permission: open
Fulltext Availability: With Fulltext
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