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Title: Monolithic integration of InSb photodetector on silicon for mid-infrared silicon photonics
Authors: Jia, Bo Wen
Tan, Kian Hua
Loke, Wan Khai
Wicaksono, Satrio
Lee, Kwang Hong
Yoon, Soon Fatt
Keywords: Monolithic Integration
Mid-infrared Photodetector
Engineering::Electrical and electronic engineering
Issue Date: 2018
Source: Jia, B. W., Tan, K. H., Loke, W. K., Wicaksono, S., Lee, K. H., & Yoon, S. F. (2018). Monolithic integration of InSb photodetector on silicon for mid-infrared silicon photonics. ACS Photonics, 5(4), 1512-1520. doi:10.1021/acsphotonics.7b01546
Series/Report no.: ACS Photonics
Abstract: The InSb photodetector on a Si substrate acts as a signal receiver for the mid-infrared silicon photonics application to overcome the limitation of group IV semiconductors. In this paper, we demonstrated an InSb p–i–n photodetector with an InAlSb barrier layer grown on (100) silicon substrates via a GaAs/Ge buffer by molecular beam epitaxy. The lattice mismatch between InSb and GaAs was accommodated by an interfacial misfit array. The 50% cutoff detectable wavelength of this detector increased from 5.7 μm at 80 K to 6.3 μm at 200 K. An 80 K detectivity of 8.8 × 109 cmHz1/2 W–1 at 5.3 μm was achieved with a quantum efficiency of 16.3%. The dark current generating mechanism of this detector is both generation–recombination and surface leakage above 140 K, while it is only surface leakage from 120 to 40 K.
DOI: 10.1021/acsphotonics.7b01546
Schools: School of Electrical and Electronic Engineering 
Research Centres: Singapore-MIT Alliance Programme 
Rights: This document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Photonics, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see
Fulltext Permission: open
Fulltext Availability: With Fulltext
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