Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/80650
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dc.contributor.authorJia, Bo Wenen
dc.contributor.authorTan, Kian Huaen
dc.contributor.authorLoke, Wan Khaien
dc.contributor.authorWicaksono, Satrioen
dc.contributor.authorLee, Kwang Hongen
dc.contributor.authorYoon, Soon Fatten
dc.date.accessioned2019-10-01T07:54:31Zen
dc.date.accessioned2019-12-06T13:53:56Z-
dc.date.available2019-10-01T07:54:31Zen
dc.date.available2019-12-06T13:53:56Z-
dc.date.issued2018en
dc.identifier.citationJia, B. W., Tan, K. H., Loke, W. K., Wicaksono, S., Lee, K. H., & Yoon, S. F. (2018). Monolithic integration of InSb photodetector on silicon for mid-infrared silicon photonics. ACS Photonics, 5(4), 1512-1520. doi:10.1021/acsphotonics.7b01546en
dc.identifier.urihttps://hdl.handle.net/10356/80650-
dc.identifier.urihttp://hdl.handle.net/10220/50067en
dc.description.abstractThe InSb photodetector on a Si substrate acts as a signal receiver for the mid-infrared silicon photonics application to overcome the limitation of group IV semiconductors. In this paper, we demonstrated an InSb p–i–n photodetector with an InAlSb barrier layer grown on (100) silicon substrates via a GaAs/Ge buffer by molecular beam epitaxy. The lattice mismatch between InSb and GaAs was accommodated by an interfacial misfit array. The 50% cutoff detectable wavelength of this detector increased from 5.7 μm at 80 K to 6.3 μm at 200 K. An 80 K detectivity of 8.8 × 109 cmHz1/2 W–1 at 5.3 μm was achieved with a quantum efficiency of 16.3%. The dark current generating mechanism of this detector is both generation–recombination and surface leakage above 140 K, while it is only surface leakage from 120 to 40 K.en
dc.description.sponsorshipNRF (Natl Research Foundation, S’pore)en
dc.format.extent22 p.en
dc.language.isoenen
dc.relation.ispartofseriesACS Photonicsen
dc.rightsThis document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Photonics, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://doi.org/10.1021/acsphotonics.7b01546en
dc.subjectMonolithic Integrationen
dc.subjectMid-infrared Photodetectoren
dc.subjectEngineering::Electrical and electronic engineeringen
dc.titleMonolithic integration of InSb photodetector on silicon for mid-infrared silicon photonicsen
dc.typeJournal Articleen
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen
dc.contributor.researchSingapore-MIT Alliance Programmeen
dc.identifier.doihttp://dx.doi.org/10.1021/acsphotonics.7b01546en
dc.description.versionAccepted versionen
item.grantfulltextopen-
item.fulltextWith Fulltext-
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