Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/80705
Title: Monolithic Fabrication of InGaAs/GaAs/AlGaAs Multiple Wavelength Quantum Well Laser Diodes via Impurity-Free Vacancy DisorderingQuantum Well Intermixing
Authors: Qiao, Zhongliang
Tang, Xiaohong
Li, Xiang
Bo, Baoxue
Gao, Xin
Qu, Yi
Liu, Chongyang
Wang, Hong
Keywords: Semiconductor laser
Quantum well intermixing (QWI)
Issue Date: 2017
Source: Qiao, Z., Tang, X., Li, X., Bo, B., Gao, X., Qu, Y., et al. (2017). Monolithic Fabrication of InGaAs/GaAs/AlGaAs Multiple Wavelength Quantum Well Laser Diodes via Impurity-Free Vacancy DisorderingQuantum Well Intermixing. IEEE Journal of the Electron Devices Society, 5(2), 122-127.
Series/Report no.: IEEE Journal of the Electron Devices Society
Abstract: InGaAs/GaAs/AlGaAs multiple wavelength quantum well (QW) semiconductor laser diodes (LDs) have been fabricated by impurity-free vacancy disordering (IFVD) QW intermixing (QWI) method. The IFVD-QWI process was carried out by sputtering-depositing SiO2 mask layers on top of the complete InGaAs/GaAs/AlGaAs QW laser structure, emitting at 980 nm wavelength, and followed by a rapid thermal annealing at 880 °C for 60 s. The lasing wavelength of the devices fabricated from the intermixed wafer was blue-shifted with the increase of the mask layer thickness. The maximum emission wavelength blue shift of a processed as-cleaved laser reached 112 nm with the output-power more than 1000 mW. By using such an IFVD-QWI technique, multi-wavelength integrated LDs have also been successfully fabricated from a single chip.
Description: 6 p.
URI: https://hdl.handle.net/10356/80705
http://hdl.handle.net/10220/42443
ISSN: 2168-6734
DOI: 10.1109/JEDS.2017.2660531
Rights: © 2017 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. The published version is available at: [https://doi.org/10.1109/JEDS.2017.2660531].
Fulltext Permission: open
Fulltext Availability: With Fulltext
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