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|Title:||W/Cu thin film infrared reflector for TiNxOy based selective solar absorber with high thermal stability||Authors:||Liu, Y. C.
Yang, H. Y.
Thin film thickness
|Issue Date:||2017||Source:||Zhang, J., Chen, T., Liu, Y. C., Liu, Z., & Yang, H. Y. (2017). W/Cu thin film infrared reflector for TiNxOy based selective solar absorber with high thermal stability. Journal of Applied Physics, 121(20), 203101-.||Series/Report no.:||Journal of Applied Physics||Abstract:||The W/Cu thin film structure is deposited by magnetron sputtering to form the infrared reflector for the TiNxOy based selective solar absorber (SSA) that can be used in the low- and middle-temperature applications. The structural, chemical, and optical properties of the SSA layers that experienced thermal annealing at different temperatures for various durations have been investigated with the characterization techniques, including X-ray photoelectron spectroscopy, X-ray diffraction, atomic force microscopy, spectroscopic ellipsometry, and spectrophotometry. Without a W layer, the reflectance in both visible and infrared ranges of the SSA increases as a result of the crystallization of the Cu layer at elevated temperatures. With a W layer with appropriate film thickness, the increase of the reflectance in the visible range can be suppressed to maintain a high solar absorptance, whereas a high infrared reflectance can be maintained to achieve a low thermal emittance. It is shown that for the SiO2-TiNxOy-W-Cu-Glass SSA with a 15 nm W thin film, thermal annealing can significantly reduce the thermal emittance to a low value (e.g., 4.4% at the temperature of 400 °C for annealing at 400 °C for 6 h), whereas the solar absorptance can be maintained at a high value (e.g., 92.2% for the annealing at 400 °C for 6 h).||URI:||https://hdl.handle.net/10356/80716
|ISSN:||0021-8979||DOI:||10.1063/1.4983763||Rights:||© 2017 American Institute of Physics (AIP). This paper was published in Journal of Applied Physics and is made available as an electronic reprint (preprint) with permission of American Institute of Physics (AIP). The published version is available at: [http://dx.doi.org/10.1063/1.4983763]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.||Fulltext Permission:||open||Fulltext Availability:||With Fulltext|
|Appears in Collections:||EEE Journal Articles|
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