Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/80722
Title: Large-Area and High-Quality 2D Transition Metal Telluride
Authors: Zhou, Jiadong
Liu, Fucai
Lin, Junhao
Huang, Xiangwei
Xia, Juan
Zhang, Bowei
Zeng, Qingsheng
Wang, Hong
Zhu, Chao
Niu, Lin
Wang, Xuewen
Fu, Wei
Yu, Peng
Chang, Tay-Rong
Hsu, Chuang-Han
Wu, Di
Jeng, Horng-Tay
Huang, Yizhong
Lin, Hsin
Shen, Zexiang
Yang, Changli
Lu, Li
Suenaga, Kazu
Zhou, Wu
Pantelides, Sokrates T.
Liu, Guangtong
Liu, Zheng
Keywords: 2D materials
Chemical vapor deposition
Issue Date: 2016
Source: Zhou, J., Liu, F., Lin, J., Huang, X., Xia, J., Zhang, B., et al. (2017). Large-Area and High-Quality 2D Transition Metal Telluride. Advanced Materials, 29(3), 1603471-.
Series/Report no.: Advanced Materials
Abstract: Large-area and high-quality 2D transition metal tellurides are synthesized by the chemical vapor deposition method. The as-grown WTe2 maintains two different stacking sequences in the bilayer, where the atomic structure of the stacking boundary is revealed by scanning transmission electron microscopy. The low-temperature transport measurements reveal a novel semimetal-to-insulator transition in WTe2 layers and an enhanced superconductivity in few-layer MoTe2.
URI: https://hdl.handle.net/10356/80722
http://hdl.handle.net/10220/43433
ISSN: 0935-9648
DOI: 10.1002/adma.201603471
Schools: School of Electrical and Electronic Engineering 
School of Materials Science and Engineering 
School of Physical and Mathematical Sciences 
Research Centres: Centre for Disruptive Photonic Technologies (CDPT) 
Centre for Micro-/Nano-electronics 
CINTRA CNRS/NTU/THALES 
Centre for Programmable Materials 
Rights: © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. This is the author created version of a work that has been peer reviewed and accepted for publication by Advanced Materials, WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. It incorporates referee’s comments but changes resulting from the publishing process, such as copyediting, structural formatting, may not be reflected in this document. The published version is available at: [http://dx.doi.org/10.1002/adma.201603471].
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles
MSE Journal Articles
SPMS Journal Articles

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