Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/80846
Title: Improving hole injection efficiency by manipulating the hole transport mechanism through p-type electron blocking layer engineering
Authors: Zhang, Zi-Hui
Ju, Zhengang
Liu, Wei
Tan, Swee Tiam
Ji, Yun
Kyaw, Zabu
Zhang, Xueliang
Hasanov, Namig
Sun, Xiao Wei
Demir, Hilmi Volkan
Keywords: DRNTU::Engineering::Electrical and electronic engineering
Issue Date: 2014
Source: Zhang, Z.-H., Ju, Z., Liu, W., Tan, S. T., Ji, Y., Kyaw, Z., et al. (2014). Improving hole injection efficiency by manipulating the hole transport mechanism through p-type electron blocking layer engineering. Optics Letters, 39(8), 2483-2486.
Series/Report no.: Optics letters
Abstract: The p-type AlGaN electron blocking layer (EBL) is widely used in InGaN/GaN light-emitting diodes (LEDs) for electron overflow suppression. However, a typical EBL also reduces the hole injection efficiency, because holes have to climb over the energy barrier generated at the p-AlGaN/p-GaN interface before entering the quantum wells. In this work, to address this problem, we report the enhancement of hole injection efficiency by manipulating the hole transport mechanism through insertion of a thin GaN layer of 1 nm into the p-AlGaN EBL and propose an AlGaN/GaN/AlGaN-type EBL outperforming conventional AlGaN EBLs. Here, the position of the inserted thin GaN layer relative to the p-GaN region is found to be the key to enhancing the hole injection efficiency. InGaN/GaN LEDs with the proposed p-type AlGaN/GaN/AlGaN EBL have demonstrated substantially higher optical output power and external quantum efficiency.
URI: https://hdl.handle.net/10356/80846
http://hdl.handle.net/10220/19562
ISSN: 0146-9592
DOI: 10.1364/OL.39.002483
Rights: © 2014 Optical Society of America.
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:EEE Journal Articles
SPMS Journal Articles

SCOPUSTM   
Citations 10

36
Updated on Sep 2, 2020

PublonsTM
Citations 10

33
Updated on Mar 4, 2021

Page view(s) 20

495
Updated on Jun 24, 2021

Google ScholarTM

Check

Altmetric


Plumx

Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.