Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/80849
Title: Band offsets at GaInP/AlGaInP(001) heterostructures lattice matched to GaAs
Authors: Zhang, X. H.
Chua, S. J.
Fan, Weijun
Keywords: DRNTU::Engineering::Electrical and electronic engineering
Issue Date: 1998
Source: Zhang, X. H., Chua, S. J., & Fan, W. (1998). Band offsets at GaInP/AlGaInP(001) heterostructures lattice matched to GaAs. Applied physics letters, 73(8), 1098.
Series/Report no.: Applied physics letters
Abstract: In this work, the band offsets at the Ga0.5In0.5P/AlxGa0.5-xIn0.5P heterojunction lattice matched to (001) GaAs was calculated over the whole range of aluminum composition from x=0.0 to 0.5 using the first-principles pseudopotential method with virtual crystal approximation. The valence band offset, VBO, varies with x as VBO=0.433x eV, while the inferred conduction band offset CBO at Γ minimum (band-gap difference minus the valence band offset) varies in x as CBOΓ=0.787x eV. Our results are in good agreement with the experimental data
URI: https://hdl.handle.net/10356/80849
http://hdl.handle.net/10220/18010
ISSN: 0003-6951
DOI: http://dx.doi.org/10.1063/1.122096
Rights: © 1998 American Institute of Physics. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at the following official DOI: [http://dx.doi.org/10.1063/1.122096].  One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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