Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/81099
Title: Electronic structure of the antiferromagnetic topological insulator candidate GdBiPt
Authors: Zhang, Jiuxing
Li, Zhi
Su, Haibin
Yang, Xinyu
Issue Date: 2015
Source: Li, Z., Su, H., Yang, X., & Zhang, J. (2015). Electronic structure of the antiferromagnetic topological insulator candidate GdBiPt. Physical Review B, 91(23), 235128-.
Series/Report no.: Physical Review B
Abstract: We studied the electronic structures of antiferromagnetic (AFM) GdBiPt with propagating vectors Q1⃗ =(0,0,π) (A-type) and Q2⃗ =(π,π,π) (G-type) by performing first-principles calculation based on density-functional theory with modified Becke and Johnson local-density approximation potentials plus Hubbard U (MBJLDA+U). With the total energy calculation, the G-type AFM spin-ordered state is relatively more stable than the A-type AFM spin-ordered state, although the difference in total energy is minute. Our band-structure calculation predicts that the A-type AFM state is topologically nontrivial due to a single s-character band inversion at the Γ point, which is similar to the band inversions in half-Heusler topological insulator candidates and bulk HgTe semiconductors, while the G-type AFM state is topologically trivial due to the absence of s/p band inversion. With a realistic tight-binding model calculation with 20 bands coupled to an AFM Zeeman field, GdBiPt with A-type AFM spin order presents a metallic surface state on the terminations with AFM aligned Gd ions, and this surface state is independent of the strength of the AFM Zeeman field, i.e., this surface state will be preserved in a nonmagnetic case. Upon terminating the ferromagnetic spin-aligned Gd ions, the surface state is dependent on the strength of the Zeeman field, and the metallic surface can recover when the Zeeman field approaches zero.
URI: https://hdl.handle.net/10356/81099
http://hdl.handle.net/10220/39127
ISSN: 1098-0121
DOI: 10.1103/PhysRevB.91.235128
Schools: School of Materials Science & Engineering 
Research Centres: Institute of Advanced Studies 
Rights: © 2015 American Physical Society. This paper was published in Physical Review B and is made available as an electronic reprint (preprint) with permission of American Physical Society. The published version is available at: [http://dx.doi.org/10.1103/PhysRevB.91.235128]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:IAS Journal Articles
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