Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/81199
Title: InGaN/GaN multiple-quantum-well light-emitting diodes with a grading InN composition suppressing the Auger recombination
Authors: Zhang, Zi-Hui
Liu, Wei
Ju, Zhengang
Tan, Swee Tiam
Ji, Yun
Kyaw, Zabu
Zhang, Xueliang
Wang, Liancheng
Sun, Xiao Wei
Demir, Hilmi Volkan
Keywords: Electrons
Current density
Multiple quantum wells
Light emitting diodes
Polarization
Issue Date: 2014
Source: Zhang, Z.-H., Liu, W., Ju, Z., Tan, S. T., Ji, Y., Kyaw, Z., et al. (2014). InGaN/GaN multiple-quantum-well light-emitting diodes with a grading InN composition suppressing the Auger recombination. Applied Physics Letters, 105(3), 033506-.
Series/Report no.: Applied Physics Letters
Abstract: In conventional InGaN/GaN light-emitting diodes (LEDs), thin InGaN quantum wells are usually adopted to mitigate the quantum confined Stark effect (QCSE), caused due to strong polarization induced electric field, through spatially confining electrons and holes in small recombination volumes. However, this inevitably increases the carrier density in quantum wells, which in turn aggravates the Auger recombination, since the Auger recombination scales with the third power of the carrier density. As a result, the efficiency droop of the Auger recombination severely limits the LED performance. Here, we proposed and showed wide InGaN quantum wells with the InN composition linearly grading along the growth orientation in LED structures suppressing the Auger recombination and the QCSE simultaneously. Theoretically, the physical mechanisms behind the Auger recombination suppression are also revealed. The proposed LED structure has experimentally demonstrated significant improvement in optical output power and efficiency droop, proving to be an effective solution to this important problem of Auger recombination.
URI: https://hdl.handle.net/10356/81199
http://hdl.handle.net/10220/39209
ISSN: 0003-6951
DOI: 10.1063/1.4891334
Rights: © 2014 American Institute of Physics (AIP). This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of American Institute of Physics (AIP). The published version is available at: [http://dx.doi.org/10.1063/1.4891334]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.
Fulltext Permission: open
Fulltext Availability: With Fulltext
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