Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/81214
Title: Polarization self-screening in [0001] oriented InGaN/GaN light-emitting diodes for improving the electron injection efficiency
Authors: Zhang, Zi-Hui
Liu, Wei
Ju, Zhengang
Tan, Swee Tiam
Ji, Yun
Zhang, Xueliang
Wang, Liancheng
Kyaw, Zabu
Sun, Xiao Wei
Demir, Hilmi Volkan
Keywords: Light emitting diodes
Polarization
Conduction bands
Charge injection
Epitaxy
Issue Date: 2014
Source: Zhang, Z.-H., Liu, W., Ju, Z., Tan, S. T., Ji, Y., Zhang, X., et al. (2014). Polarization self-screening in [0001] oriented InGaN/GaN light-emitting diodes for improving the electron injection efficiency. Applied Physics Letters, 104(25), 251108-.
Series/Report no.: Applied Physics Letters
Abstract: InGaN/GaN light-emitting diodes (LEDs) grown along the [0001] orientation inherit very strong polarization induced electric fields. This results in a reduced effective conduction band barrier height for the p-type AlGaN electron blocking layer (EBL) and makes the electron blocking effect relatively ineffective and the electron injection efficiency drops. Here, we show the concept of polarization self-screening for improving the electron injection efficiency. In this work, the proposed polarization self-screening effect was studied and proven through growing a p-type EBL with AlN composition partially graded along the [0001] orientation, which induces the bulk polarization charges. These bulk polarization charges are utilized to effectively self-screen the positive polarization induced interface charges located at the interface between the EBL and the last quantum barrier when designed properly. Using this approach, the electron leakage is suppressed and the LED performance is enhanced significantly.
URI: https://hdl.handle.net/10356/81214
http://hdl.handle.net/10220/39200
ISSN: 0003-6951
DOI: 10.1063/1.4885421
Rights: © 2014 American Institute of Physics (AIP). This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of American Institute of Physics (AIP). The published version is available at: [http://dx.doi.org/10.1063/1.4885421]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.
Fulltext Permission: open
Fulltext Availability: With Fulltext
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