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|Title:||Interaction-Driven Metal-Insulator Transition in Strained Graphene||Authors:||Tang, Ho-Kin
Rodrigues, J. N. B.
Assaad, F. F.
|Keywords:||Physics & Applied Physics||Issue Date:||2015||Source:||Tang, H.-K., Laksono, E., Rodrigues, J. N. B., Sengupta, P., Assaad, F. F., & Adam, S. (2015). Interaction-Driven Metal-Insulator Transition in Strained Graphene. Physical Review Letters, 115, 186602-.||Series/Report no.:||Physical Review Letters||Abstract:||The question of whether electron-electron interactions can drive a metal to insulator transition in graphene under realistic experimental conditions is addressed. Using three representative methods to calculate the effective long-range Coulomb interaction between π electrons in graphene and solving for the ground state using quantum Monte Carlo methods, we argue that, without strain, graphene remains metallic and changing the substrate from SiO2 to suspended samples hardly makes any difference. In contrast, applying a rather large—but experimentally realistic—uniform and isotropic strain of about 15% seems to be a promising route to making graphene an antiferromagnetic Mott insulator.||URI:||https://hdl.handle.net/10356/81233
|ISSN:||0031-9007||DOI:||10.1103/PhysRevLett.115.186602||Rights:||© 2015 American Physical Society. This paper was published in Physical Review Letters and is made available as an electronic reprint (preprint) with permission of American Physical Society. The published version is available at: [http://dx.doi.org/10.1103/PhysRevLett.115.186602]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.||Fulltext Permission:||open||Fulltext Availability:||With Fulltext|
|Appears in Collections:||SPMS Journal Articles|
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