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Title: Integration of InGaAs MOSFETs and GaAs/ AlGaAs lasers on Si Substrate for advanced opto-electronic integrated circuits (OEICs)
Authors: Kumar, Annie
Lee, Shuh-Ying
Yadav, Sachin
Tan, Kian Hua
Loke, Wan Khai
Dong, Yuan
Lee, Kwang Hong
Wicaksono, Satrio
Liang, Gengchiau
Yoon, Soon-Fatt
Antoniadis, Dimitri
Yeo, Yee-Chia
Gong, Xiao
Keywords: Integrated Optics
Integrated Optoelectronic Circuits
DRNTU::Engineering::Electrical and electronic engineering
Issue Date: 2017
Source: Kumar, A., Lee, S.-Y., Yadav, S., Tan, K. H., Loke, W. K., Dong, Y., ... Gong, X. (2017). Integration of InGaAs MOSFETs and GaAs/ AlGaAs lasers on Si Substrate for advanced opto-electronic integrated circuits (OEICs). Optics Express, 25(25), 31853-31862. doi:10.1364/OE.25.031853
Series/Report no.: Optics Express
Abstract: Lasers monolithically integrated with high speed MOSFETs on the silicon (Si) substrate could be a key to realize low cost, low power, and high speed opto-electronic integrated circuits (OEICs). In this paper, we report the monolithic integration of InGaAs channel transistors with electrically pumped GaAs/AlGaAs lasers on the Si substrate for future advanced OEICs. The laser and transistor layers were grown on the Si substrate by molecular beam epitaxy (MBE) using direct epitaxial growth. InGaAs n-FETs with an ION/IOFF ratio of more than 106 with very low off-state leakage and a low subthreshold swing with a minimum of 82 mV/decade were realized. Electrically pumped GaAs/AlGaAs quantum well (QW) lasers with a lasing wavelength of 795 nm at room temperature were demonstrated. The overall fabrication process has a low thermal budget of no more than 400 °C.
DOI: 10.1364/OE.25.031853
Rights: © 2017 Optical Society of America under the terms of the OSA Open Access Publishing Agreement.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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