Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/81287
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dc.contributor.authorKumar, Annieen
dc.contributor.authorLee, Shuh-Yingen
dc.contributor.authorYadav, Sachinen
dc.contributor.authorTan, Kian Huaen
dc.contributor.authorLoke, Wan Khaien
dc.contributor.authorDong, Yuanen
dc.contributor.authorLee, Kwang Hongen
dc.contributor.authorWicaksono, Satrioen
dc.contributor.authorLiang, Gengchiauen
dc.contributor.authorYoon, Soon-Fatten
dc.contributor.authorAntoniadis, Dimitrien
dc.contributor.authorYeo, Yee-Chiaen
dc.contributor.authorGong, Xiaoen
dc.date.accessioned2019-01-14T09:13:04Zen
dc.date.accessioned2019-12-06T14:27:28Z-
dc.date.available2019-01-14T09:13:04Zen
dc.date.available2019-12-06T14:27:28Z-
dc.date.issued2017en
dc.identifier.citationKumar, A., Lee, S.-Y., Yadav, S., Tan, K. H., Loke, W. K., Dong, Y., ... Gong, X. (2017). Integration of InGaAs MOSFETs and GaAs/ AlGaAs lasers on Si Substrate for advanced opto-electronic integrated circuits (OEICs). Optics Express, 25(25), 31853-31862. doi:10.1364/OE.25.031853en
dc.identifier.urihttps://hdl.handle.net/10356/81287-
dc.description.abstractLasers monolithically integrated with high speed MOSFETs on the silicon (Si) substrate could be a key to realize low cost, low power, and high speed opto-electronic integrated circuits (OEICs). In this paper, we report the monolithic integration of InGaAs channel transistors with electrically pumped GaAs/AlGaAs lasers on the Si substrate for future advanced OEICs. The laser and transistor layers were grown on the Si substrate by molecular beam epitaxy (MBE) using direct epitaxial growth. InGaAs n-FETs with an ION/IOFF ratio of more than 106 with very low off-state leakage and a low subthreshold swing with a minimum of 82 mV/decade were realized. Electrically pumped GaAs/AlGaAs quantum well (QW) lasers with a lasing wavelength of 795 nm at room temperature were demonstrated. The overall fabrication process has a low thermal budget of no more than 400 °C.en
dc.description.sponsorshipNRF (Natl Research Foundation, S’pore)en
dc.format.extent10 p.en
dc.language.isoenen
dc.relation.ispartofseriesOptics Expressen
dc.rights© 2017 Optical Society of America under the terms of the OSA Open Access Publishing Agreement.en
dc.subjectIntegrated Opticsen
dc.subjectIntegrated Optoelectronic Circuitsen
dc.subjectDRNTU::Engineering::Electrical and electronic engineeringen
dc.titleIntegration of InGaAs MOSFETs and GaAs/ AlGaAs lasers on Si Substrate for advanced opto-electronic integrated circuits (OEICs)en
dc.typeJournal Articleen
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen
dc.identifier.doi10.1364/OE.25.031853en
dc.description.versionPublished versionen
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