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Title: Hetero-epitaxy of high quality germanium film on silicon substrate for optoelectronic integrated circuit applications
Authors: Lee, Kwang Hong
Bao, Shuyu
Lin, Yiding
Wang, Yue
Li, Wei
Zhang, Lin
Michel, Jurgen
Fitzgerald, Eugene A.
Tan, Chuan Seng
Anantha, P.
Keywords: Germanium
DRNTU::Engineering::Electrical and electronic engineering
Issue Date: 2017
Source: Lee, K. H., Bao, S., Lin, Y., Li, W., Anantha, P., Zhang, L., . . . Tan, C. S. (2017). Hetero-epitaxy of high quality germanium film on silicon substrate for optoelectronic integrated circuit applications. Journal of Materials Research, 32(21), 4025-4040. doi:10.1557/jmr.2017.324
Series/Report no.: Journal of Materials Research
Abstract: Integration of photonic devices on silicon (Si) substrates is a key method in enabling large scale manufacturing of Si-based photonic–electronic circuits for next generation systems with high performance, small form factor, low power consumption, and low cost. Germanium (Ge) is a promising material due to its pseudo-direct bandgap and its compatibility with Si-CMOS processing. In this article, we present our recent progress on achieving high quality germanium-on-silicon (Ge/Si) materials. Subsequently, the performance of various functional devices such as photodetectors, lasers, waveguides, and sensors that are fabricated on the Ge/Si platform are discussed. Some possible future works such as the incorporation of tin (Sn) into Ge will be proposed. Finally, some applications based on a fully monolithic integrated photonic–electronic chip on an Si platform will be highlighted at the end of this article.
ISSN: 0884-2914
DOI: 10.1557/jmr.2017.324
Schools: School of Electrical and Electronic Engineering 
Research Centres: Singapore-MIT Alliance Programme 
Rights: © 2017 Materials Research Society. All rights reserved. This paper was published in Journal of Materials Research and is made available with permission of Materials Research Society.
Fulltext Permission: open
Fulltext Availability: With Fulltext
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