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dc.contributor.authorLee, Kwang Hongen
dc.contributor.authorBao, Shuyuen
dc.contributor.authorLin, Yidingen
dc.contributor.authorWang, Yueen
dc.contributor.authorLi, Weien
dc.contributor.authorZhang, Linen
dc.contributor.authorMichel, Jurgenen
dc.contributor.authorFitzgerald, Eugene A.en
dc.contributor.authorTan, Chuan Sengen
dc.contributor.authorAnantha, P.en
dc.identifier.citationLee, K. H., Bao, S., Lin, Y., Li, W., Anantha, P., Zhang, L., . . . Tan, C. S. (2017). Hetero-epitaxy of high quality germanium film on silicon substrate for optoelectronic integrated circuit applications. Journal of Materials Research, 32(21), 4025-4040. doi:10.1557/jmr.2017.324en
dc.description.abstractIntegration of photonic devices on silicon (Si) substrates is a key method in enabling large scale manufacturing of Si-based photonic–electronic circuits for next generation systems with high performance, small form factor, low power consumption, and low cost. Germanium (Ge) is a promising material due to its pseudo-direct bandgap and its compatibility with Si-CMOS processing. In this article, we present our recent progress on achieving high quality germanium-on-silicon (Ge/Si) materials. Subsequently, the performance of various functional devices such as photodetectors, lasers, waveguides, and sensors that are fabricated on the Ge/Si platform are discussed. Some possible future works such as the incorporation of tin (Sn) into Ge will be proposed. Finally, some applications based on a fully monolithic integrated photonic–electronic chip on an Si platform will be highlighted at the end of this article.en
dc.description.sponsorshipNRF (Natl Research Foundation, S’pore)en
dc.format.extent16 p.en
dc.relation.ispartofseriesJournal of Materials Researchen
dc.rights© 2017 Materials Research Society. All rights reserved. This paper was published in Journal of Materials Research and is made available with permission of Materials Research Society.en
dc.subjectDRNTU::Engineering::Electrical and electronic engineeringen
dc.titleHetero-epitaxy of high quality germanium film on silicon substrate for optoelectronic integrated circuit applicationsen
dc.typeJournal Articleen
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen
dc.contributor.researchSingapore-MIT Alliance Programmeen
dc.description.versionPublished versionen
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