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|Title:||Hetero-epitaxy of high quality germanium film on silicon substrate for optoelectronic integrated circuit applications||Authors:||Lee, Kwang Hong
Fitzgerald, Eugene A.
Tan, Chuan Seng
DRNTU::Engineering::Electrical and electronic engineering
|Issue Date:||2017||Source:||Lee, K. H., Bao, S., Lin, Y., Li, W., Anantha, P., Zhang, L., . . . Tan, C. S. (2017). Hetero-epitaxy of high quality germanium film on silicon substrate for optoelectronic integrated circuit applications. Journal of Materials Research, 32(21), 4025-4040. doi:10.1557/jmr.2017.324||Series/Report no.:||Journal of Materials Research||Abstract:||Integration of photonic devices on silicon (Si) substrates is a key method in enabling large scale manufacturing of Si-based photonic–electronic circuits for next generation systems with high performance, small form factor, low power consumption, and low cost. Germanium (Ge) is a promising material due to its pseudo-direct bandgap and its compatibility with Si-CMOS processing. In this article, we present our recent progress on achieving high quality germanium-on-silicon (Ge/Si) materials. Subsequently, the performance of various functional devices such as photodetectors, lasers, waveguides, and sensors that are fabricated on the Ge/Si platform are discussed. Some possible future works such as the incorporation of tin (Sn) into Ge will be proposed. Finally, some applications based on a fully monolithic integrated photonic–electronic chip on an Si platform will be highlighted at the end of this article.||URI:||https://hdl.handle.net/10356/81289
|ISSN:||0884-2914||DOI:||10.1557/jmr.2017.324||Rights:||© 2017 Materials Research Society. All rights reserved. This paper was published in Journal of Materials Research and is made available with permission of Materials Research Society.||Fulltext Permission:||open||Fulltext Availability:||With Fulltext|
|Appears in Collections:||EEE Journal Articles|
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