Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/81333
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dc.contributor.authorIwan, S.en
dc.contributor.authorZhao, J. L.en
dc.contributor.authorTan, S. T.en
dc.contributor.authorFan, H. M.en
dc.contributor.authorSun, Xiao Weien
dc.contributor.authorBambang, S.en
dc.contributor.authorHikam, M.en
dc.date.accessioned2016-06-20T06:13:56Zen
dc.date.accessioned2019-12-06T14:28:39Z-
dc.date.available2016-06-20T06:13:56Zen
dc.date.available2019-12-06T14:28:39Z-
dc.date.issued2014en
dc.identifier.citationIwan, S., Zhao, J., Tan, S., Bambang, S., Hikam, M., Fan, H., et al. (2015). Ion-dependent electroluminescence from trivalent rare-earth doped n-ZnO/p-Si heterostructured light-emitting diodes. Materials Science in Semiconductor Processing, 30, 263-266.en
dc.identifier.issn1369-8001en
dc.identifier.urihttps://hdl.handle.net/10356/81333-
dc.description.abstractWe have demonstrated rare earths (REs) doped ZnO-based heterojunction light-emitting diodes (LEDs) on p-Si substrates by ultrasonic spray pyrolisis (USP). Room-temperature electroluminescence was clearly observed from reverse-biased n-ZnO:REs/p-Si diodes, which red and blue color emissions were realized from Eu and Tm ions, respectively. The narrow line-width emissions are attributed to the transitions within the shielded 4f levels of the trivalent REs ions that resulting from direct electron impact excitation during reverse bias.en
dc.description.sponsorshipASTAR (Agency for Sci., Tech. and Research, S’pore)en
dc.format.extent15 p.en
dc.language.isoenen
dc.relation.ispartofseriesMaterials Science in Semiconductor Processingen
dc.rights© 2014 Elsevier. This is the author created version of a work that has been peer reviewed and accepted for publication by Materials Science in Semiconductor Processing, Elsevier. It incorporates referee’s comments but changes resulting from the publishing process, such as copyediting, structural formatting, may not be reflected in this document. The published version is available at: [http://dx.doi.org/10.1016/j.mssp.2014.09.048].en
dc.subjectZnOen
dc.subjectHeterojunctionen
dc.subjectRare earthsen
dc.subjectElectron impact excitationen
dc.subjectReverse-biaseden
dc.subjectLEDsen
dc.titleIon-dependent electroluminescence from trivalent rare-earth doped n-ZnO/p-Si heterostructured light-emitting diodesen
dc.typeJournal Articleen
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen
dc.identifier.doi10.1016/j.mssp.2014.09.048en
dc.description.versionAccepted versionen
item.fulltextWith Fulltext-
item.grantfulltextopen-
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