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https://hdl.handle.net/10356/81343
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DC Field | Value | Language |
---|---|---|
dc.contributor.author | Zheng, K. | en |
dc.contributor.author | Sun, Xiao Wei | en |
dc.contributor.author | Teo, K. L. | en |
dc.date.accessioned | 2015-12-23T08:08:09Z | en |
dc.date.accessioned | 2019-12-06T14:28:50Z | - |
dc.date.available | 2015-12-23T08:08:09Z | en |
dc.date.available | 2019-12-06T14:28:50Z | - |
dc.date.issued | 2013 | en |
dc.identifier.citation | Zheng, K., Sun, X. W., & Teo, K. L. (2013). The Effect of Intrinsic Defects on Resistive Switching Based on p–n Heterojunction. Nanoscience and Nanotechnology Letters, 5(8), 868-871. | en |
dc.identifier.issn | 1941-4900 | en |
dc.identifier.uri | https://hdl.handle.net/10356/81343 | - |
dc.description.abstract | We report a unidirectional bipolar resistive switching in an n-type GaO x /p-type NiO x heterojunction fabricated by magnetron sputtering at room temperature. The resistive switching (RS) of the heterojunction directly relate with the concentration of intrinsic defects in oxide, such as oxygen vacancies and oxygen ions. Under external electric field, these electromigrated defects accumulate at the pn junction interface and modify the interface barrier, forming or rupturing the filamentary paths between n-GaO x and p-NiO x , leading to the switching between Ohmic and diode characteristics of the device. | en |
dc.description.sponsorship | ASTAR (Agency for Sci., Tech. and Research, S’pore) | en |
dc.language.iso | en | en |
dc.relation.ispartofseries | Nanoscience and Nanotechnology Letters | en |
dc.rights | © 2013 American Scientific Publishers. | en |
dc.subject | Heterojunction | en |
dc.subject | Interface | en |
dc.subject | Filament | en |
dc.subject | Resistive switching | en |
dc.subject | Intrinsic defects | en |
dc.title | The Effect of Intrinsic Defects on Resistive Switching Based on p–n Heterojunction | en |
dc.type | Journal Article | en |
dc.contributor.school | School of Electrical and Electronic Engineering | en |
dc.identifier.doi | 10.1166/nnl.2013.1626 | en |
item.fulltext | No Fulltext | - |
item.grantfulltext | none | - |
Appears in Collections: | EEE Journal Articles |
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