Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/81343
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dc.contributor.authorZheng, K.en
dc.contributor.authorSun, Xiao Weien
dc.contributor.authorTeo, K. L.en
dc.date.accessioned2015-12-23T08:08:09Zen
dc.date.accessioned2019-12-06T14:28:50Z-
dc.date.available2015-12-23T08:08:09Zen
dc.date.available2019-12-06T14:28:50Z-
dc.date.issued2013en
dc.identifier.citationZheng, K., Sun, X. W., & Teo, K. L. (2013). The Effect of Intrinsic Defects on Resistive Switching Based on p–n Heterojunction. Nanoscience and Nanotechnology Letters, 5(8), 868-871.en
dc.identifier.issn1941-4900en
dc.identifier.urihttps://hdl.handle.net/10356/81343-
dc.description.abstractWe report a unidirectional bipolar resistive switching in an n-type GaO x /p-type NiO x heterojunction fabricated by magnetron sputtering at room temperature. The resistive switching (RS) of the heterojunction directly relate with the concentration of intrinsic defects in oxide, such as oxygen vacancies and oxygen ions. Under external electric field, these electromigrated defects accumulate at the pn junction interface and modify the interface barrier, forming or rupturing the filamentary paths between n-GaO x and p-NiO x , leading to the switching between Ohmic and diode characteristics of the device.en
dc.description.sponsorshipASTAR (Agency for Sci., Tech. and Research, S’pore)en
dc.language.isoenen
dc.relation.ispartofseriesNanoscience and Nanotechnology Lettersen
dc.rights© 2013 American Scientific Publishers.en
dc.subjectHeterojunctionen
dc.subjectInterfaceen
dc.subjectFilamenten
dc.subjectResistive switchingen
dc.subjectIntrinsic defectsen
dc.titleThe Effect of Intrinsic Defects on Resistive Switching Based on p–n Heterojunctionen
dc.typeJournal Articleen
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen
dc.identifier.doi10.1166/nnl.2013.1626en
item.fulltextNo Fulltext-
item.grantfulltextnone-
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