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|Title:||Study of Multilevel High-Resistance States in HfOx-Based Resistive Switching Random Access Memory by Impedance Spectroscopy||Authors:||Li, H. K.
Chen, T. P.
Hu, S. G.
Lee, P. S.
Wang, X. P.
Li, H. Y.
Lo, G. Q.
|Keywords:||Multilevel high-resistance states
Resistive switching random access memory (RRAM)
|Issue Date:||2015||Source:||Li, H. K., Chen, T. P., Hu, S. G., Liu, P., Liu, Y., Lee, P. S., et al. (2015). Study of Multilevel High-Resistance States in HfOx-Based Resistive Switching Random Access Memory by Impedance Spectroscopy. IEEE Transactions on Electron Devices, 62(8), 2684-2688.||Series/Report no.:||IEEE Transactions on Electron Devices||Abstract:||Multilevel high resistance states are achieved in TiN/HfOx/Pt resistive switching random access memory device by controlling the reset stop voltage. Impedance spectroscopy is used to study the multilevel high resistance states. It is shown that the high resistance states can be described with an equivalent circuit consisting of the major components Rs, R, and C corresponding to the series resistance of the TiON interfacial layer, the equivalent parallel resistance and capacitance of the leakage gap between the TiON layer and the residual conductive filament, respectively. These components show a strong dependence on the stop voltage, which can be explained in the framework of oxygen vacancy model and conductive filament concept. On the other hand, R is observed to decrease with DC bias, which can be attributed to the barrier lowering effect of the Coulombic trap well in the Poole-Frenkel emission model.||URI:||https://hdl.handle.net/10356/81371
|ISSN:||0018-9383||DOI:||10.1109/TED.2015.2445339||Rights:||© 2015 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. The published version is available at: [http://dx.doi.org/10.1109/TED.2015.2445339].||Fulltext Permission:||open||Fulltext Availability:||With Fulltext|
|Appears in Collections:||EEE Journal Articles|
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