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Title: A 220-285 GHz SPDT Switch in 65-nm CMOS Using Switchable Resonator Concept
Authors: Meng, Fanyi
Ma, Kaixue
Yeo, Kiat Seng
Boon, Chirn Chye
Lim, Wei Meng
Xu, Shanshan
Keywords: Coupled-lines
Single-pole double-throw (SPDT) switches
Switchable resonator
Issue Date: 2015
Source: Meng, F., Ma, K., Yeo, K. S., Boon, C. C., Lim, W. M., & Xu, S. (2015). A 220–285 GHz SPDT Switch in 65-nm CMOS Using Switchable Resonator Concept. IEEE Transactions on Terahertz Science and Technology, 5(4), 649-651.
Series/Report no.: IEEE Transactions on Terahertz Science and Technology
Abstract: The paper reports a SPDT switch operating from 220 to 285 GHz in 65-nm bulk CMOS. The switchable resonator concept by using three coupled-lines topology is proposed and adopted in the switch design. Equivalent circuit models are introduced for analyzing the operation mechanism of proposed switch. The fabricated SPDT switch features measured insertion loss of 4.2 dB including RF pad losses, isolation of 19 dB, return loss of better than 10 dB, simulated P1dB of 9.2 dBm, and zero power consumption. To the best of authors' knowledge, this switch achieves the highest operating frequency and smallest chip size among reported SPDT switches in CMOS and BiCMOS technologies.
ISSN: 2156-342X
DOI: 10.1109/TTHZ.2015.2436216
Rights: © 2015 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. The published version is available at: [].
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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