Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/81373
Title: Novel Q-factor enhancement technique for on-chip spiral inductors and its application to CMOS low-noise amplifier designs
Authors: Meng, Fanyi
Ma, Kaixue
Yeo, Kiat Seng
Xu, Shanshan
Keywords: Low-noise amplifier
Millimeter-wave integrated circuits
On-chip inductor
Quality factor
CMOS integrated circuits
Issue Date: 2015
Source: Meng, F., Ma, K., Yeo, K. S., & Xu, S. (2015). Novel Q-factor enhancement technique for on-chip spiral inductors and its application to cmos low-noise amplifier designs. Microwave and Optical Technology Letters, 57(12), 2883-2886.
Series/Report no.: Microwave and Optical Technology Letters
Abstract: In this article, a novel Q-factor enhancement technique for on-chip spiral inductors is presented. Symmetric return ground structure in traditional on-chip spiral inductors is modified and shifted toward the side with stronger magnetic field caused by asymmetrical windings of inductors. In full-wave electro-magnetic simulation, it is observed that by applying this technique, inductor with higher Q-factor and larger inductance is obtained with no cost of additional chip area. Using the proposed technique, on-chip inductors are customized for a three-stage cascode low-noise amplifier (LNA) design. Fabricated in a commercial 65-nm CMOS process, the LNA features peak gain of 26.3 dB, 21.8 mW power consumption, noise figure of 5.3 dB, output P1 dB of −4 dBm, and core size of 0.15 mm2. In the comparison with prior arts, the proposed design achieves the highest gain and figure-of-merit.
URI: https://hdl.handle.net/10356/81373
http://hdl.handle.net/10220/39541
ISSN: 0895-2477
DOI: 10.1002/mop.29453
Rights: © 2015 Wiley Periodicals Inc. This is the author created version of a work that has been peer reviewed and accepted for publication by Microwave and Optical Technology Letters, Wiley Periodicals Inc. It incorporates referee’s comments but changes resulting from the publishing process, such as copyediting, structural formatting, may not be reflected in this document. The published version is available at: [http://dx.doi.org/10.1002/mop.29453].
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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