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Title: Realization of vertical metal semiconductor heterostructures via solution phase epitaxy
Authors: Wang, Xiaoshan
Wang, Zhiwei
Zhang, Jindong
Wang, Xiang
Zhang, Zhipeng
Wang, Jialiang
Zhu, Zhaohua
Li, Zhuoyao
Liu, Yao
Hu, Xuefeng
Qiu, Junwen
Hu, Guohua
Chen, Bo
Wang, Ning
He, Qiyuan
Chen, Junze
Yan, Jiaxu
Zhang, Wei
Hasan, Tawfique
Li, Shaozhou
Li, Hai
Zhang, Hua
Wang, Qiang
Huang, Xiao
Huang, Wei
Keywords: DRNTU::Engineering::Materials
Metal Semiconductor Heterostructures
Solution Phase Epitaxy
Issue Date: 2018
Source: Wang, X., Wang, Z., Zhang, J., Wang, X., Zhang, Z., Wang, J., . . . Huang, W. (2018). Realization of vertical metal semiconductor heterostructures via solution phase epitaxy. Nature Communications, 9, 3611-. doi:10.1038/s41467-018-06053-z
Series/Report no.: Nature Communications
Abstract: The creation of crystal phase heterostructures of transition metal chalcogenides, e.g., the 1T/2H heterostructures, has led to the formation of metal/semiconductor junctions with low potential barriers. Very differently, post-transition metal chalcogenides are semiconductors regardless of their phases. Herein, we report, based on experimental and simulation results, that alloying between 1T-SnS2 and 1T-WS2 induces a charge redistribution in Sn and W to realize metallic Sn0.5W0.5S2 nanosheets. These nanosheets are epitaxially deposited on surfaces of semiconducting SnS2 nanoplates to form vertical heterostructures. The ohmic-like contact formed at the Sn0.5W0.5S2/SnS2 heterointerface affords rapid transport of charge carriers, and allows for the fabrication of fast photodetectors. Such facile charge transfer, combined with a high surface affinity for acetone molecules, further enables their use as highly selective 100 ppb level acetone sensors. Our work suggests that combining compositional and structural control in solution-phase epitaxy holds promises for solution-processible thin-film optoelectronics and sensors.
DOI: 10.1038/s41467-018-06053-z
Rights: © 2018 The Author(s). This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:MSE Journal Articles

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