Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/81448
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dc.contributor.authorHan, Yongen
dc.contributor.authorLau, Boon Longen
dc.contributor.authorZhang, Xiaowuen
dc.contributor.authorLeong, Yoke Choyen
dc.contributor.authorChoo, Kok Fahen
dc.date.accessioned2016-06-23T09:08:02Zen
dc.date.accessioned2019-12-06T14:31:12Z-
dc.date.available2016-06-23T09:08:02Zen
dc.date.available2019-12-06T14:31:12Z-
dc.date.issued2014en
dc.identifier.citationHan, Y., Lau, B. L., Zhang, X., Leong, Y. C., & Choo, K. F. (2014). Enhancement of Hotspot Cooling With Diamond Heat Spreader on Cu Microchannel Heat Sink for GaN-on-Si Device. IEEE Transactions on Components, Packaging and Manufacturing Technology, 4(6), 983-990.en
dc.identifier.issn2156-3985en
dc.identifier.urihttps://hdl.handle.net/10356/81448-
dc.description.abstractThe diamond heat spreader has been directly attached between the test chip and the Cu microchannel heat sink for thermal performance enhancement of the GaN-on-Si device. In the fabricated test vehicle, the small heater is used to represent one unit of transistor. Experimental tests have been conducted on the fabricated test vehicle to investigate the performance. Two types of simulation models have been constructed in COMSOL, considering the multiphysics features and temperature-dependent material properties. The submodel in conjunction with the main model is constructed to predict the thermal performance of the GaN-on-Si structure. The heating power, which is concentrated on eight tiny heaters of size 350 × 150 μm2, is varied from 10 to 50 W. With the diamond heat spreader attached to the liquidcooled microchannel heat sink, the maximum heater temperature can be reduced by 11.5%-22.9%, while the maximum gate temperature can be reduced by 8.9%-18.5%. Consistent results from the experimental and simulation studies have verified the enhancement of the hotspot cooling capability using directly attached diamond heat spreader.en
dc.description.sponsorshipASTAR (Agency for Sci., Tech. and Research, S’pore)en
dc.format.extent16 p.en
dc.language.isoenen
dc.relation.ispartofseriesIEEE Transactions on Components, Packaging and Manufacturing Technologyen
dc.rights© 2014 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. The published version is available at: [http://dx.doi.org/10.1109/TCPMT.2014.2315234].en
dc.subjectDiamondsen
dc.subjectHeat sinksen
dc.subjectHeatingen
dc.subjectLogic gatesen
dc.subjectMicrochannelen
dc.subjectSiliconen
dc.titleEnhancement of Hotspot Cooling With Diamond Heat Spreader on Cu Microchannel Heat Sink for GaN-on-Si Deviceen
dc.typeJournal Articleen
dc.contributor.researchTemasek Laboratoriesen
dc.identifier.doi10.1109/TCPMT.2014.2315234en
dc.description.versionAccepted versionen
item.fulltextWith Fulltext-
item.grantfulltextopen-
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