Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/81472
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dc.contributor.authorHan, Yongen
dc.contributor.authorLau, Boon Longen
dc.contributor.authorZhang, Xiaowuen
dc.contributor.authorLeong, Yoke Choyen
dc.contributor.authorChoo, Kok Fahen
dc.date.accessioned2016-06-24T04:29:34Zen
dc.date.accessioned2019-12-06T14:31:48Z-
dc.date.available2016-06-24T04:29:34Zen
dc.date.available2019-12-06T14:31:48Z-
dc.date.issued2014en
dc.identifier.citationHan, Y., Lau, B. L., Zhang, X., Leong, Y. C., & Choo, K. F. (2014). Thermal Management of Hotspots With a Microjet-Based Hybrid Heat Sink for GaN-on-Si Devices. IEEE Transactions on Components, Packaging and Manufacturing Technology, 4(9), 1441-1450.en
dc.identifier.issn2156-3950en
dc.identifier.urihttps://hdl.handle.net/10356/81472-
dc.description.abstractThe direct-die-attached cooling solution with a diamond heat spreader and hybrid Si heat sink has been developed for hotspot cooling of a GaN-on-Si device. The hybrid heat sink combines the benefits of microchannel flow and microjet impingement. In the fabricated test chip, the small hotspot is used to represent one unit of a GaN transistor. Experimental tests have been conducted on the fabricated test vehicle to investigate the thermal and fluidic performances. Two types of simulation models have been constructed using the commercial Finite Element Method software COMSOL, using the multiphysics features and temperature-dependent material properties. A submodel in conjunction with the main model is constructed to predict the thermal performance of the GaN-on-Si structure. Various heating powers 10-150 W are loaded on eight tiny hotspots of size 450 × 300 μm (heat flux on each hotspot 0.93-13.89 kW/cm2). An overall spatially averaged heat transfer coefficient of 11.53 × 104 W/m2K has been achieved in the microjet-based hybrid heat sink. Consistent results from the experimental and simulation studies have verified the high heat dissipation capability of the designed cooling solution. Several simulations have been conducted to investigate the effects of the heat sink structure and dimensions on the performances for hotspot thermal management.en
dc.description.sponsorshipASTAR (Agency for Sci., Tech. and Research, S’pore)en
dc.format.extent19 p.en
dc.language.isoenen
dc.relation.ispartofseriesIEEE Transactions on Components, Packaging and Manufacturing Technologyen
dc.rights© 2014 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. The published version is available at: [http://dx.doi.org/10.1109/TCPMT.2014.2335203].en
dc.subjectElectronic coolingen
dc.subjectheat dissipation capabilityen
dc.subjecthigh-electron mobility transistor (HEMT)en
dc.subjecthotspoten
dc.subjectmicrochannel heat sink (MCHS)en
dc.subjectmicrojet impingementen
dc.titleThermal Management of Hotspots With a Microjet-Based Hybrid Heat Sink for GaN-on-Si Devicesen
dc.typeJournal Articleen
dc.contributor.researchTemasek Laboratoriesen
dc.identifier.doi10.1109/TCPMT.2014.2335203en
dc.description.versionAccepted versionen
item.fulltextWith Fulltext-
item.grantfulltextopen-
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