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Title: Thermal Management of Hotspots With a Microjet-Based Hybrid Heat Sink for GaN-on-Si Devices
Authors: Han, Yong
Lau, Boon Long
Zhang, Xiaowu
Leong, Yoke Choy
Choo, Kok Fah
Keywords: Electronic cooling
heat dissipation capability
high-electron mobility transistor (HEMT)
microchannel heat sink (MCHS)
microjet impingement
Issue Date: 2014
Source: Han, Y., Lau, B. L., Zhang, X., Leong, Y. C., & Choo, K. F. (2014). Thermal Management of Hotspots With a Microjet-Based Hybrid Heat Sink for GaN-on-Si Devices. IEEE Transactions on Components, Packaging and Manufacturing Technology, 4(9), 1441-1450.
Series/Report no.: IEEE Transactions on Components, Packaging and Manufacturing Technology
Abstract: The direct-die-attached cooling solution with a diamond heat spreader and hybrid Si heat sink has been developed for hotspot cooling of a GaN-on-Si device. The hybrid heat sink combines the benefits of microchannel flow and microjet impingement. In the fabricated test chip, the small hotspot is used to represent one unit of a GaN transistor. Experimental tests have been conducted on the fabricated test vehicle to investigate the thermal and fluidic performances. Two types of simulation models have been constructed using the commercial Finite Element Method software COMSOL, using the multiphysics features and temperature-dependent material properties. A submodel in conjunction with the main model is constructed to predict the thermal performance of the GaN-on-Si structure. Various heating powers 10-150 W are loaded on eight tiny hotspots of size 450 × 300 μm (heat flux on each hotspot 0.93-13.89 kW/cm2). An overall spatially averaged heat transfer coefficient of 11.53 × 104 W/m2K has been achieved in the microjet-based hybrid heat sink. Consistent results from the experimental and simulation studies have verified the high heat dissipation capability of the designed cooling solution. Several simulations have been conducted to investigate the effects of the heat sink structure and dimensions on the performances for hotspot thermal management.
ISSN: 2156-3950
DOI: 10.1109/TCPMT.2014.2335203
Research Centres: Temasek Laboratories 
Rights: © 2014 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. The published version is available at: [].
Fulltext Permission: open
Fulltext Availability: With Fulltext
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