Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/81515
Title: Band alignment of HfO2/AlN heterojunction investigated by X-ray photoelectron spectroscopy
Authors: Ye, Gang
Wang, Hong
Ji, Rong
Keywords: III-V semiconductors
X-ray photoelectron spectroscopy
Issue Date: 2016
Source: Ye, G., Wang, H., & Ji, R. (2016). Band alignment of HfO2/AlN heterojunction investigated by X-ray photoelectron spectroscopy. Applied Physics Letters, 108(16), 162103-.
Series/Report no.: Applied Physics Letters
Abstract: The band alignment between AlN and Atomic-Layer-Deposited (ALD) HfO2 was determined by X-ray photoelectron spectroscopy(XPS). The shift of Al 2p core-levels to lower binding energies with the decrease of take-off angles θ indicated upward band bending occurred at the AlNsurface. Based on the angle-resolved XPS measurements combined with numerical calculations, valence band discontinuity ΔEV of 0.4 ± 0.2 eV at HfO2/AlN interface was determined by taking AlNsurface band bending into account. By taking the band gap of HfO2 and AlN as 5.8 eV and 6.2 eV, respectively, a type-II band line-up was found between HfO2 and AlN.
URI: https://hdl.handle.net/10356/81515
http://hdl.handle.net/10220/40837
ISSN: 0003-6951
DOI: 10.1063/1.4947435
Rights: © 2016 AIP Publishing LLC. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of AIP Publishing LLC. The published version is available at: [http://dx.doi.org/10.1063/1.4947435]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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