Please use this identifier to cite or link to this item:
|Title:||Enhanced stability of complementary resistance switching in the TiN/HfOx/TiN resistive random access memory device via interface engineering||Authors:||Ang, Diing Shenp
Zhang, H. Z.
Yew, K. S.
Wang, X. P.
Atomic layer deposition
|Issue Date:||2016||Source:||Zhang, H. Z., Ang, D. S., Yew, K. S., & Wang, X. P. (2016). Enhanced stability of complementary resistance switching in the TiN/HfOx/TiN resistive random access memory device via interface engineering. Applied Physics Letters, 108(8), 083505-.||Series/Report no.:||Applied Physics Letters||Abstract:||This study shows that a majority (70%) of TiN/HfOx/TiN devices exhibit failed complementary resistance switching (CRS) after forming. In conjunction with the consistent observation of a large non-polar reset loop in the first post-forming voltage-sweep measurement, it is proposed that breakdown of the TiN/HfOx interfacial oxide layers (crucial in enabling CRS) and the accompanied formation of Ti filaments (due to Ti migration from the TiN cathode into the breakdown path) resulted in CRS failure and the observed non-polar reset behavior. This hypothesis is supported by the significant reduction or complete elimination of the large non-polar reset and CRS failure in devices with a thin Al2O3 layer incorporated at the TiN-cathode/HfOx or both TiN/HfOx interfaces. The higher breakdown field of the thin Al2O3 enables it to sustain the forming voltage until the forming process is interrupted, thus enabling CRS via oxygen exchange with the adjacent vacancy-type filament formed in the HfOx.||URI:||https://hdl.handle.net/10356/81517
|ISSN:||0003-6951||DOI:||10.1063/1.4942801||Rights:||© 2016 AIP Publishing LLC. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of AIP Publishing LLC. The published version is available at: [http://dx.doi.org/10.1063/1.4942801]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.||Fulltext Permission:||open||Fulltext Availability:||With Fulltext|
|Appears in Collections:||EEE Journal Articles|
Files in This Item:
|Enhanced stability of complementary resistance switching in the TiNHfOxTiN resistive.pdf||1.14 MB||Adobe PDF|
Updated on Jul 21, 2020
Updated on Mar 4, 2021
Page view(s) 50297
Updated on May 11, 2021
Updated on May 11, 2021
Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.