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Title: Ferroelectricity and ferroelectric resistive switching in sputtered Hf0.5Zr0.5O2 thin films
Authors: Fan, Zhen
Xiao, Juanxiu
Wang, Jingxian
Zhang, Lei
Deng, Jinyu
Liu, Ziyan
Dong, Zhili
Wang, John
Chen, Jingsheng
Keywords: Polarization
Ferroelectric thin films
Issue Date: 2016
Source: Fan, Z., Xiao, J., Wang, J., Zhang, L., Deng, J., Liu, Z., et al. (2016). Ferroelectricity and ferroelectric resistive switching in sputtered Hf0.5Zr0.5O2 thin films. Applied Physics Letters, 108(23), 232905-.
Series/Report no.: Applied Physics Letters
Abstract: Ferroelectric properties and ferroelectric resistive switching (FE-RS) of sputtered Hf0.5Zr0.5O2 (HZO) thin films were investigated. The HZO films with the orthorhombic phase were obtained without capping or post-deposition annealing. Ferroelectricity was demonstrated by polarization-voltage (P-V) hysteresis loops measured in a positive-up negative-down manner and piezoresponse force microscopy. However, defects such as oxygen vacancies caused the films to become leaky. The observed ferroelectricity and semiconducting characteristics led to the FE-RS effect. The FE-RS effect may be explained by a polarization modulated trap-assisted tunneling model. Our study not only provides a facile route to develop ferroelectric HfO2-based thin films but also explores their potential applications in FE-RS memories.
ISSN: 0003-6951
DOI: 10.1063/1.4953461
Schools: School of Materials Science & Engineering 
Rights: © 2016 AIP Publishing LLC. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of AIP Publishing LLC. The published version is available at: []. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:MSE Journal Articles

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