Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/81526
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dc.contributor.authorFan, Zhenen
dc.contributor.authorXiao, Juanxiuen
dc.contributor.authorWang, Jingxianen
dc.contributor.authorZhang, Leien
dc.contributor.authorDeng, Jinyuen
dc.contributor.authorLiu, Ziyanen
dc.contributor.authorDong, Zhilien
dc.contributor.authorWang, Johnen
dc.contributor.authorChen, Jingshengen
dc.date.accessioned2016-06-30T08:03:57Zen
dc.date.accessioned2019-12-06T14:32:58Z-
dc.date.available2016-06-30T08:03:57Zen
dc.date.available2019-12-06T14:32:58Z-
dc.date.issued2016en
dc.identifier.citationFan, Z., Xiao, J., Wang, J., Zhang, L., Deng, J., Liu, Z., et al. (2016). Ferroelectricity and ferroelectric resistive switching in sputtered Hf0.5Zr0.5O2 thin films. Applied Physics Letters, 108(23), 232905-.en
dc.identifier.issn0003-6951en
dc.identifier.urihttps://hdl.handle.net/10356/81526-
dc.description.abstractFerroelectric properties and ferroelectric resistive switching (FE-RS) of sputtered Hf0.5Zr0.5O2 (HZO) thin films were investigated. The HZO films with the orthorhombic phase were obtained without capping or post-deposition annealing. Ferroelectricity was demonstrated by polarization-voltage (P-V) hysteresis loops measured in a positive-up negative-down manner and piezoresponse force microscopy. However, defects such as oxygen vacancies caused the films to become leaky. The observed ferroelectricity and semiconducting characteristics led to the FE-RS effect. The FE-RS effect may be explained by a polarization modulated trap-assisted tunneling model. Our study not only provides a facile route to develop ferroelectric HfO2-based thin films but also explores their potential applications in FE-RS memories.en
dc.description.sponsorshipNRF (Natl Research Foundation, S’pore)en
dc.format.extent5 p.en
dc.language.isoenen
dc.relation.ispartofseriesApplied Physics Lettersen
dc.rights© 2016 AIP Publishing LLC. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of AIP Publishing LLC. The published version is available at: [http://dx.doi.org/10.1063/1.4953461]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.en
dc.subjectPolarizationen
dc.subjectFerroelectric thin filmsen
dc.titleFerroelectricity and ferroelectric resistive switching in sputtered Hf0.5Zr0.5O2 thin filmsen
dc.typeJournal Articleen
dc.contributor.schoolSchool of Materials Science & Engineeringen
dc.identifier.doi10.1063/1.4953461en
dc.description.versionPublished versionen
item.grantfulltextopen-
item.fulltextWith Fulltext-
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