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Title: MOCVD Growth and Fabrication of High Power MUTC Photodiodes Using InGaAs-InP System
Authors: Singh, Nandan
Ho, Charles Kin Fai
Tina, Guo Xin
Mohan, Manoj Kumar Chandra
Lee, Kenneth Eng Kian
Wang, Hong
Lam, Huy Quoc
Keywords: Antireflection coatings
Device fabrications
Issue Date: 2015
Source: Singh, N., Ho, C. K. F., Tina, G. X., Mohan, M. K. C., Lee, K. E. K., Wang, H., et al. (2015). MOCVD Growth and Fabrication of High Power MUTC Photodiodes Using InGaAs-InP System. Journal of Nanomaterials, 2015, 436851-.
Series/Report no.: Journal of Nanomaterials
Abstract: We report charge-compensated modified uni-traveling-carrier photodiodes (MUTC-PDs) with high photocurrent and fast response, grown using liquid group-V precursor, in an AIXTRON MOCVD system. The liquid group-V precursors involve less toxicity with better decomposition characteristics. Device fabrication is completed with standard processing techniques with BCB passivation. DC and RF measurements are carried out using a single mode fiber at 1.55 μm. For a 24-μm-diameter device (with diode ideality factor of 1.34), the dark current is 32.5 nA and the 3-dB bandwidth is ≫20 GHz at a reverse bias of 5 V, which are comparable to the theoretical values. High photocurrent of over 150.0 mA from larger diameter (>60 μm) devices is obtained. The maximum DC responsivity at 1.55 μm wavelength is O.51 A/W without antireflection coating. These photodiodes play a key role in the progress of the future THz communication systems.
ISSN: 1687-4110
DOI: 10.1155/2015/436851
Research Centres: Temasek Laboratories 
Rights: © 2015 Nandan Singh et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:TL Journal Articles

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