Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/81535
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dc.contributor.authorSingh, Nandanen
dc.contributor.authorHo, Charles Kin Faien
dc.contributor.authorTina, Guo Xinen
dc.contributor.authorMohan, Manoj Kumar Chandraen
dc.contributor.authorLee, Kenneth Eng Kianen
dc.contributor.authorWang, Hongen
dc.contributor.authorLam, Huy Quocen
dc.date.accessioned2016-01-05T08:28:23Zen
dc.date.accessioned2019-12-06T14:33:11Z-
dc.date.available2016-01-05T08:28:23Zen
dc.date.available2019-12-06T14:33:11Z-
dc.date.issued2015en
dc.identifier.citationSingh, N., Ho, C. K. F., Tina, G. X., Mohan, M. K. C., Lee, K. E. K., Wang, H., et al. (2015). MOCVD Growth and Fabrication of High Power MUTC Photodiodes Using InGaAs-InP System. Journal of Nanomaterials, 2015, 436851-.en
dc.identifier.issn1687-4110en
dc.identifier.urihttps://hdl.handle.net/10356/81535-
dc.identifier.urihttp://hdl.handle.net/10220/39575en
dc.description.abstractWe report charge-compensated modified uni-traveling-carrier photodiodes (MUTC-PDs) with high photocurrent and fast response, grown using liquid group-V precursor, in an AIXTRON MOCVD system. The liquid group-V precursors involve less toxicity with better decomposition characteristics. Device fabrication is completed with standard processing techniques with BCB passivation. DC and RF measurements are carried out using a single mode fiber at 1.55 μm. For a 24-μm-diameter device (with diode ideality factor of 1.34), the dark current is 32.5 nA and the 3-dB bandwidth is ≫20 GHz at a reverse bias of 5 V, which are comparable to the theoretical values. High photocurrent of over 150.0 mA from larger diameter (>60 μm) devices is obtained. The maximum DC responsivity at 1.55 μm wavelength is O.51 A/W without antireflection coating. These photodiodes play a key role in the progress of the future THz communication systems.en
dc.format.extent6 p.en
dc.language.isoenen
dc.relation.ispartofseriesJournal of Nanomaterialsen
dc.rights© 2015 Nandan Singh et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.en
dc.subjectAntireflection coatingsen
dc.subjectDevice fabricationsen
dc.titleMOCVD Growth and Fabrication of High Power MUTC Photodiodes Using InGaAs-InP Systemen
dc.typeJournal Articleen
dc.contributor.researchTemasek Laboratoriesen
dc.identifier.doi10.1155/2015/436851en
dc.description.versionPublished versionen
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