Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/81646
Title: A Compact Model for Generic MIS-HEMTs Based on the Unified 2DEG Density Expression
Authors: Zhang, Junbin
Syamal, Binit
Zhou, Xing
Arulkumaran, Subramaniam
Ng, Geok Ing
Keywords: 2-D electron gas (2DEG)
compact model (CM)
Issue Date: 2014
Source: Zhang, J., Syamal, B., Zhou, X., Arulkumaran, S., & Ng, G. I. (2014). A Compact Model for Generic MIS-HEMTs Based on the Unified 2DEG Density Expression. IEEE Transactions on Electron Devices, 61(2), 314-323.
Series/Report no.: IEEE Transactions on Electron Devices
Abstract: In this paper, the 2-D electron gas density (ns) and Fermi level (Ef) analytical expressions as an explicit function of the terminal biases that covers the strong- and moderate-inversion and subthreshold regions and scalable with physical parameters are developed. It is validated by the comparison with the (exact) numerical solutions for different device parameters, in which the device operating region may encompass one or two lowest sub-bands ( E0 and E1) in the triangular well. With the unified Ef model, a surface-potential (φs) based drain-current (Ids) model for the metal-insulator-semiconductor (MIS) high electron-mobility transistor (HEMT) is developed. Nonlinear source/drain access region resistances ( Rs and Rd) can also be modeled via a subcircuit, including an empirical Rs model for capturing the current-collapse effect. The compact drain-current model is shown to match the experimental data of MIS HEMTs very well in both subthreshold and strong-inversion regions, with smooth and symmetric behaviors and including the (dc) self-heating effect. It also models the corresponding MIS diode C-V using the same set of physical and minimum fitting parameters.
URI: https://hdl.handle.net/10356/81646
http://hdl.handle.net/10220/40922
ISSN: 0018-9383
DOI: 10.1109/TED.2013.2295400
Rights: © 2014 IEEE.
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:EEE Journal Articles
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