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Title: Graphene-based transparent conductive electrodes for GaN-based light emitting diodes: Challenges and countermeasures
Authors: Wang, Liancheng
Liu, Wei
Zhang, Yiyun
Zhang, Zi-Hui
Yi, Xiaoyan
Wang, Guohong
Sun, Xiaowei
Zhu, Hongwei
Tan, Swee Tiam
Hilmi Volkan Demir
Keywords: Graphene; Light emitting diodes; Transparent conductive electrodes; Gallium nitride; Chemical vapor deposition
Issue Date: 2015
Source: Wang, L., Liu, W., Zhang, Y., Zhang, Z.-H., Tan, S. T., Yi, X., et al. (2015). Graphene-based transparent conductive electrodes for GaN-based light emitting diodes: Challenges and countermeasures. Nano Energy, 12, 419-436.
Series/Report no.: Nano Energy
Abstract: Graphene, with attractive electrical, optical, mechanical and thermal properties, is considered to be an ideal candidate for transparent conductive electrodes (TCEs) in many optoelectronic devices, including III-nitride based devices. However, high contact resistivity (ρc) between graphene and GaN (especially p-GaN) has become a major challenge for graphene TCEs utilization in GaN-based light-emitting diodes (LEDs). Here, we analyzed the graphene/GaN contact junction in detail and reviewed the current research progress for reducing ρc in graphene TCEs on GaN LEDs, including interface engineering, chemical doping and tunnel junction design. We also analyzed the current diffusion length for a single layer graphene (SLG) and multiple layer graphene (MLG) TCEs. Finally, to improve the fabrication process compatibility and simplicity with paramount reproduction, a method of directly growing graphene films on GaN by chemical vapor deposition (CVD) is proposed. We also give a short analysis on the reliability of graphene TCEs for GaN-based LEDs. It is believed that this is the ultimate solution for graphene TCEs application for GaN-based LEDs and others in general for other opto- and electrical devices.
ISSN: 2211-2855
DOI: 10.1016/j.nanoen.2014.12.035
Rights: © 2014 Elsevier Ltd. This is the author created version of a work that has been peer reviewed and accepted for publication by Nano Energy, Elsevier Ltd. It incorporates referee’s comments but changes resulting from the publishing process, such as copyediting, structural formatting, may not be reflected in this document. The published version is available at: [].
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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