Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/81730
Title: High-Photocurrent and Wide-Bandwidth UTC Photodiodes With Dipole-Doped Structure
Authors: Meng, Qian Qian
Wang, Hong
Liu, Chong Yang
Ang, Kian Siong
Guo, Xin
Gao, Bo
Tian, Yang
Manoj Kumar, Chandra Mohan
Gao, Jianjun
Keywords: Dipole-doped layer; high speed; photocurrent; uni-traveling-carrier photodiodes (UTC-PDs); 3-dB bandwidth
Issue Date: 2014
Source: Meng, Q. Q., Wang, H., Liu, C. Y., Ang, K. S., Guo, X., Gao, B., et al. (2014). High-Photocurrent and Wide-Bandwidth UTC Photodiodes With Dipole-Doped Structure. IEEE Photonics Technology Letters, 26(19), 1952-1955.
Series/Report no.: IEEE Photonics Technology Letters
Abstract: InP-based unitraveling-carrier photodiodes (UTC-PDs) with novel dipole-doped structure to achieve high photocurrent as well as wide bandwidth are demonstrated in this letter. The dipole-doped layers in combination with a 22-nm-thick undoped InGaAs setback layer were employed at the InGaAs/InP absorption and collection interface to reduce the current blocking effect. A high photocurrent of 160 mA with 1.9 GHz 3-dB bandwidth from a 70-(mu ) m-diameter top-illuminated UTC-PD is achieved. A large 3-dB bandwidth of 62.5 GHz, extracted using an equivalent circuit model, has also been obtained from a 12-(mu ) m-diameter UTC-PD device. The results demonstrate that the dipole-doping can serve as an effective alternative to the quaternary InGaAsP layer at InGaAs/InP interface for InP-based UTC-PD to suppress the current blocking and reduce the complexity in epilayers growth and device fabrication.
URI: https://hdl.handle.net/10356/81730
http://hdl.handle.net/10220/39678
ISSN: 1041-1135
DOI: 10.1109/LPT.2014.2343260
Rights: © 2014 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. The published version is available at: [http://dx.doi.org/10.1109/LPT.2014.2343260].
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles
TL Journal Articles

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