Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/81733
Title: Design of a Temperature-Aware Low-Voltage SRAM With Self-Adjustable Sensing Margin Enhancement for High-Temperature Applications up to 300 °C
Authors: Kim, Tony Tae-Hyoung
Le Ba, Ngoc
Keywords: Solid-State Circuits
Issue Date: 2014
Source: Kim, T. T.-H., & Le Ba, N. (2014). Design of a Temperature-Aware Low-Voltage SRAM With Self-Adjustable Sensing Margin Enhancement for High-Temperature Applications up to 300 °C. IEEE Journal of Solid-State Circuits, 49(11), 2534-2546.
Series/Report no.: IEEE Journal of Solid-State Circuits
Abstract: This paper presents an 8-Kbit low-power SRAM for high-temperature (up to 300°C) applications. For reliable low-voltage operation, we employed a decoupled 8T SRAM cell structure. To minimize the performance variations caused by the wide operating temperate range, supply voltage was selected in the near-threshold region. A temperature-aware bitline sensing margin enhancement technique is proposed to mitigate the impact of significantly increased bitline leakage on bitline swing and sensing window. A temperature-tracking control circuit generates bias voltage for optimal pull-up current for realizing the proposed enhancement technique. Test chips were fabricated in a commercial 5 V, 1.0 μm SOI technology. Test chip measurement demonstrates successful operation down to 2 V at 300°C. The average energy of 0.94 pJ was achieved at 2 V and 300°C.
URI: https://hdl.handle.net/10356/81733
http://hdl.handle.net/10220/39665
DOI: 10.1109/JSSC.2014.2338860
Rights: © 2014 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. The published version is available at: [http://dx.doi.org/10.1109/JSSC.2014.2338860].
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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