Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/81737
Title: Design of an Ultra-low Voltage 9T SRAM With Equalized Bitline Leakage and CAM-Assisted Energy Efficiency Improvement
Authors: Wang, Bo
Nguyen, Truc Quynh
Do, Anh Tuan
Zhou, Jun
Je, Minkyu
Kim, Tony Tae-Hyoung
Keywords: Energy efficiency improvement
Ultra-low voltage SRAM design
Bitline leakage equalization
Content addressable memory
Issue Date: 2014
Source: Wang, B., Nguyen, T. Q., Do, A. T., Zhou, J., Je, M., & Kim, T. T.-H. (2015). Design of an Ultra-low Voltage 9T SRAM With Equalized Bitline Leakage and CAM-Assisted Energy Efficiency Improvement. IEEE Transactions on Circuits and Systems I: Regular Papers, 62(2), 441-448.
Series/Report no.: IEEE Transactions on Circuits and Systems I: Regular Papers
Abstract: This paper presents a 9T multi-threshold (MTCMOS) SRAM macro with equalized bitline leakage and a content-addressable-memory-assisted (CAM-assisted) write performance boosting technique for energy efficiency improvement. A 3T-based read port is proposed to equalize read bitline (RBL) leakage and to improve RBL sensing margin by eliminating data-dependence on bitline leakage current. A miniature CAM-assisted circuit is integrated to conceal the slow data development with HVT devices after data flipping in write operation and therefore enhance the write performance for energy efficiency. A 16 kb SRAM test chip is fabricated in 65 nm CMOS technology. The operating voltage of the test chip is scalable from 1.2 V down to 0.26 V with the read access time from 6 ns to 0.85 μs. Minimum energy of 2.07 pJ is achieved at 0.4 V with 40.3% improvement compared to the SRAM without the aid of the CAM. Energy efficiency is enhanced by 29.4% between 0.38 V ~ 0.6 V by the proposed CAM-assisted circuit.
URI: https://hdl.handle.net/10356/81737
http://hdl.handle.net/10220/39677
ISSN: 1549-8328
DOI: 10.1109/TCSI.2014.2360760
Rights: © 2014 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. The published version is available at: [http://dx.doi.org/10.1109/TCSI.2014.2360760].
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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