Please use this identifier to cite or link to this item:
Title: Transition metal oxides on organic semiconductors
Authors: Zhao, Yongbiao
Zhang, Jun
Liu, Shuwei
Gao, Yuan
Yang, Xuyong
Leck, Kheng Swee
Abiyasa, Agus Putu
Divayana, Yoga
Mutlugun, Evren
Tan, Swee Tiam
Xiong, Qihua
Demir, Hilmi Volkan
Sun, Xiao Wei
Keywords: p-doping
Transition metal oxide
Issue Date: 2014
Source: Zhao, Y., Zhang, J., Liu, S., Gao, Y., Yang, X., Leck, K. S., et al. (2014). Transition metal oxides on organic semiconductors. Organic Electronics, 15(4), 871-877.
Series/Report no.: Organic Electronics
Abstract: Transition metal oxides (TMOs) on organic semiconductors (OSs) structure has been widely used in inverted organic optoelectronic devices, including inverted organic light-emitting diodes (OLEDs) and inverted organic solar cells (OSCs), which can improve the stability of such devices as a result of improved protection of air sensitive cathode. However, most of these reports are focused on the anode modification effect of TMO and the nature of TMO-on-OS is not fully understood. Here we show that the OS on TMO forms a two-layer structure, where the interface mixing is minimized, while for TMO-on-OS, due to the obvious diffusion of TMO into the OS, a doping-layer structure is formed. This is evidenced by a series of optical and electrical studies. By studying the TMO diffusion depth in different OS, we found that this process is governed by the thermal property of the OS. The TMO tends to diffuse deeper into the OS with a lower evaporation temperature. It is shown that the TMO can diffuse more than 20 nm into the OS, depending on the thermal property of the OS. We also show that the TMO-on-OS structure can replace the commonly used OS with TMO doping structure, which is a big step toward in simplifying the fabrication process of the organic optoelectronic devices.
ISSN: 1566-1199
DOI: 10.1016/j.orgel.2014.01.011
Rights: © 2014 Elsevier.
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:EEE Journal Articles
SPMS Journal Articles

Google ScholarTM




Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.