Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/81810
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dc.contributor.authorZhao, Yongbiaoen
dc.contributor.authorZhang, Junen
dc.contributor.authorLiu, Shuweien
dc.contributor.authorGao, Yuanen
dc.contributor.authorYang, Xuyongen
dc.contributor.authorLeck, Kheng Sweeen
dc.contributor.authorAbiyasa, Agus Putuen
dc.contributor.authorDivayana, Yogaen
dc.contributor.authorMutlugun, Evrenen
dc.contributor.authorTan, Swee Tiamen
dc.contributor.authorXiong, Qihuaen
dc.contributor.authorDemir, Hilmi Volkanen
dc.contributor.authorSun, Xiao Weien
dc.date.accessioned2016-07-19T08:39:07Zen
dc.date.accessioned2019-12-06T14:40:51Z-
dc.date.available2016-07-19T08:39:07Zen
dc.date.available2019-12-06T14:40:51Z-
dc.date.issued2014en
dc.identifier.citationZhao, Y., Zhang, J., Liu, S., Gao, Y., Yang, X., Leck, K. S., et al. (2014). Transition metal oxides on organic semiconductors. Organic Electronics, 15(4), 871-877.en
dc.identifier.issn1566-1199en
dc.identifier.urihttps://hdl.handle.net/10356/81810-
dc.identifier.urihttp://hdl.handle.net/10220/40973en
dc.description.abstractTransition metal oxides (TMOs) on organic semiconductors (OSs) structure has been widely used in inverted organic optoelectronic devices, including inverted organic light-emitting diodes (OLEDs) and inverted organic solar cells (OSCs), which can improve the stability of such devices as a result of improved protection of air sensitive cathode. However, most of these reports are focused on the anode modification effect of TMO and the nature of TMO-on-OS is not fully understood. Here we show that the OS on TMO forms a two-layer structure, where the interface mixing is minimized, while for TMO-on-OS, due to the obvious diffusion of TMO into the OS, a doping-layer structure is formed. This is evidenced by a series of optical and electrical studies. By studying the TMO diffusion depth in different OS, we found that this process is governed by the thermal property of the OS. The TMO tends to diffuse deeper into the OS with a lower evaporation temperature. It is shown that the TMO can diffuse more than 20 nm into the OS, depending on the thermal property of the OS. We also show that the TMO-on-OS structure can replace the commonly used OS with TMO doping structure, which is a big step toward in simplifying the fabrication process of the organic optoelectronic devices.en
dc.description.sponsorshipNRF (Natl Research Foundation, S’pore)en
dc.description.sponsorshipASTAR (Agency for Sci., Tech. and Research, S’pore)en
dc.language.isoenen
dc.relation.ispartofseriesOrganic Electronicsen
dc.rights© 2014 Elsevier.en
dc.subjectp-dopingen
dc.subjectTransition metal oxideen
dc.titleTransition metal oxides on organic semiconductorsen
dc.typeJournal Articleen
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen
dc.contributor.schoolSchool of Physical and Mathematical Sciencesen
dc.contributor.researchLUMINOUS! Center of Excellence for Semiconductor Lighting and Displaysen
dc.identifier.doihttp://dx.doi.org/10.1016/j.orgel.2014.01.011en
item.grantfulltextnone-
item.fulltextNo Fulltext-
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