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Title: Advantages of the Blue InGaN/GaN Light-Emitting Diodes with an AlGaN/GaN/AlGaN Quantum Well Structured Electron Blocking Layer
Authors: Ju, Zhen Gang
Liu, Wei
Zhang, Zi-Hui
Tan, Swee Tiam
Ji, Yun
Kyaw, Zabu
Zhang, Xue Liang
Lu, Shun Peng
Zhang, Yi Ping
Zhu, Bin Bin
Hasanov, Namig
Sun, Xiao Wei
Demir, Hilmi Volkan
Keywords: GaN; LED; QW; EBL; MOCVD
Issue Date: 2014
Source: Ju, Z. G., Liu, W., Zhang, Z.-H., Tan, S. T., Ji, Y., Kyaw, Z., et al. (2014). Advantages of the Blue InGaN/GaN Light-Emitting Diodes with an AlGaN/GaN/AlGaN Quantum Well Structured Electron Blocking Layer. ACS Photonics, 1(4), 377-381.
Series/Report no.: ACS Photonics
Abstract: InGaN/GaN light-emitting diodes (LEDs) with p-(AlGaN/GaN/AlGaN) quantum well structured electron blocking layer (QWEBL) are designed and grown by a metal–organic chemical-vapor deposition (MOCVD) system. The proposed QWEBL LED structure, in which a p-GaN QW layer is inserted in the p-AlGaN electron blocking layer, not only leads to an improved hole injection but also reduces the electron leakage, thus enhancing the radiative recombination rates across the active region. Consequently, the light output power was enhanced by 10% for the QWEBL LED at a current density of 35 A/cm2. The efficiency droop of the optimized device was reduced to 16%. This is much smaller than that of the conventional p-AlGaN electron blocking layer LED, which is 31%.
ISSN: 2330-4022
DOI: 10.1021/ph500001e
Rights: © 2014 American Chemical Society. This is the author created version of a work that has been peer reviewed and accepted for publication by ACS Photonics, American Chemical Society. It incorporates referee’s comments but changes resulting from the publishing process, such as copyediting, structural formatting, may not be reflected in this document. The published version is available at: [].
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles
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