Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/81889
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dc.contributor.authorZhu, Binbinen
dc.contributor.authorLiu, Weien
dc.contributor.authorLu, Shunpengen
dc.contributor.authorZhang, Yipingen
dc.contributor.authorHasanov, Namigen
dc.contributor.authorZhang, Xueliangen
dc.contributor.authorJi, Yunen
dc.contributor.authorZhang, Zi-Huien
dc.contributor.authorTan, Swee Tiamen
dc.contributor.authorLiu, Hongfeien
dc.contributor.authorDemir, Hilmi Volkanen
dc.date.accessioned2017-04-19T05:32:45Zen
dc.date.accessioned2019-12-06T14:42:25Z-
dc.date.available2017-04-19T05:32:45Zen
dc.date.available2019-12-06T14:42:25Z-
dc.date.copyright2016en
dc.date.issued2016en
dc.identifier.citationZhu, B., Liu, W., Lu, S., Zhang, Y., Hasanov, N., Zhang, X., et al. (2016). Decoupling contact and mirror: an effective way to improve the reflector for flip-chip InGaN/GaN-based light-emitting diodes. Journal of Physics D: Applied Physics, 49(26), 265106-.en
dc.identifier.issn0022-3727en
dc.identifier.urihttps://hdl.handle.net/10356/81889-
dc.description8 p.en
dc.description.abstractIn the conventional fabrication process of the widely-adopted Ni/Ag/Ti/Au reflector for InGaN/GaN-based flip-chip light-emitting diodes (LEDs), the contact and the mirror are entangled together with contrary processing conditions which set constraints to the device performance severely. Here we first report the concept and its effectiveness of decoupling the contact formation and the mirror construction. The ohmic contact is first formed by depositing and annealing an extremely thin layer of Ni/Ag on top of p-GaN. The mirror construction is then carried out by depositing thick layer of Ag/Ti/Au without any annealing. Compared with the conventional fabrication method of the reflector, by which the whole stack of Ni/Ag/Ti/Au is deposited and annealed together, the optical output power is improved by more than 70% at 350 mA without compromising the electrical performance. The mechanism of decoupling the contact and the mirror is analyzed with the assistance of contactless sheet resistance measurement and secondary ion mass spectrometry (SIMS) depth profile analysis.en
dc.description.sponsorshipNRF (Natl Research Foundation, S’pore)en
dc.language.isoenen
dc.relation.ispartofseriesJournal of Physics D: Applied Physicsen
dc.rights© 2016 IOP Publishing Ltd. This is the author created version of a work that has been peer reviewed and accepted for publication by Journal of Physics D: Applied Physics, IOP Publishing Ltd. It incorporates referee’s comments but changes resulting from the publishing process, such as copyediting, structural formatting, may not be reflected in this document. The published version is available at: [http://dx.doi.org/10.1088/0022-3727/49/26/265106].en
dc.subjectOhmic contacten
dc.subjectDecoupleden
dc.titleDecoupling contact and mirror: an effective way to improve the reflector for flip-chip InGaN/GaN-based light-emitting diodesen
dc.typeJournal Articleen
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen
dc.contributor.schoolSchool of Physical and Mathematical Sciencesen
dc.identifier.doi10.1088/0022-3727/49/26/265106en
dc.description.versionAccepted Versionen
dc.identifier.rims197830en
item.fulltextWith Fulltext-
item.grantfulltextopen-
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