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Title: Decoupling contact and mirror: an effective way to improve the reflector for flip-chip InGaN/GaN-based light-emitting diodes
Authors: Zhu, Binbin
Liu, Wei
Lu, Shunpeng
Zhang, Yiping
Hasanov, Namig
Zhang, Xueliang
Ji, Yun
Zhang, Zi-Hui
Tan, Swee Tiam
Liu, Hongfei
Demir, Hilmi Volkan
Keywords: Ohmic contact
Issue Date: 2016
Source: Zhu, B., Liu, W., Lu, S., Zhang, Y., Hasanov, N., Zhang, X., et al. (2016). Decoupling contact and mirror: an effective way to improve the reflector for flip-chip InGaN/GaN-based light-emitting diodes. Journal of Physics D: Applied Physics, 49(26), 265106-.
Series/Report no.: Journal of Physics D: Applied Physics
Abstract: In the conventional fabrication process of the widely-adopted Ni/Ag/Ti/Au reflector for InGaN/GaN-based flip-chip light-emitting diodes (LEDs), the contact and the mirror are entangled together with contrary processing conditions which set constraints to the device performance severely. Here we first report the concept and its effectiveness of decoupling the contact formation and the mirror construction. The ohmic contact is first formed by depositing and annealing an extremely thin layer of Ni/Ag on top of p-GaN. The mirror construction is then carried out by depositing thick layer of Ag/Ti/Au without any annealing. Compared with the conventional fabrication method of the reflector, by which the whole stack of Ni/Ag/Ti/Au is deposited and annealed together, the optical output power is improved by more than 70% at 350 mA without compromising the electrical performance. The mechanism of decoupling the contact and the mirror is analyzed with the assistance of contactless sheet resistance measurement and secondary ion mass spectrometry (SIMS) depth profile analysis.
Description: 8 p.
ISSN: 0022-3727
DOI: 10.1088/0022-3727/49/26/265106
Rights: © 2016 IOP Publishing Ltd. This is the author created version of a work that has been peer reviewed and accepted for publication by Journal of Physics D: Applied Physics, IOP Publishing Ltd. It incorporates referee’s comments but changes resulting from the publishing process, such as copyediting, structural formatting, may not be reflected in this document. The published version is available at: [].
Fulltext Permission: open
Fulltext Availability: With Fulltext
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