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Title: GeSn-on-insulator substrate formed by direct wafer bonding
Authors: Lee, Kwang Hong
Bao, Shuyu
Wang, Wei
Lei, Dian
Wang, Bing
Gong, Xiao
Tan, Chuan Seng
Yeo, Yee-Chia
Keywords: Elemental semiconductors
Issue Date: 2016
Source: Lei, D., Lee, K. H., Bao, S., Wang, W., Wang, B., Gong, X., et al. (2016). GeSn-on-insulator substrate formed by direct wafer bonding. Applied Physics Letters, 109(2), 022106-.
Series/Report no.: Applied Physics Letters
Abstract: GeSn-on-insulator (GeSnOI) on Silicon (Si) substrate was realized using direct wafer bonding technique. This process involves the growth of Ge 1- xSnx layer on a first Si (001) substrate (donor wafer) followed by the deposition of SiO2 on Ge 1- xSnx, the bonding of the donor wafer to a second Si (001) substrate (handle wafer), and removal of the Si donor wafer. The GeSnOI material quality is investigated using high-resolution transmission electron microscopy, high-resolution X-ray diffraction (HRXRD), atomic-force microscopy, Raman spectroscopy, and spectroscopic ellipsometry. The Ge 1- xSnx layer on GeSnOI substrate has a surface roughness of 1.90 nm, which is higher than that of the original Ge 1- xSnx epilayer before transfer (surface roughness is 0528 nm). The compressive strain of the Ge 1- xSnx film in the GeSnOI is as low as 0.10% as confirmed using HRXRD and Raman spectroscopy.
ISSN: 0003-6951
DOI: 10.1063/1.4958844
Rights: © 2016 American Institute of Physics. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The published version is available at: []. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.
Fulltext Permission: open
Fulltext Availability: With Fulltext
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