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https://hdl.handle.net/10356/82056| Title: | Gallium-Doped Tin Oxide Nano-Cuboids for Improved Dye Sensitized Solar Cell | Authors: | Teh, Jun Jie Ting, Siong Luong Leong, Kam Chew Li, Jun Chen, Peng |
Keywords: | dye sensitized solar cell; tin oxide; gallium doping; nano-cuboid; band edge; charge recombination | Issue Date: | 2013 | Source: | Teh, J. J., Ting, S. L., Leong, K. C., Li, J., & Chen, P. (2013). Gallium-Doped Tin Oxide Nano-Cuboids for Improved Dye Sensitized Solar Cell. ACS Applied Materials & Interfaces, 5(21), 11377-11382. | Series/Report no.: | ACS Applied Materials & Interfaces | Abstract: | Tin dioxide (SnO2) is a potential candidate to replace conventional titanium dioxide (TiO2) in dye-sensitized solar cells (DSSCs) because of its wider bandgap and higher electron mobility. However, SnO2 suffers from low band edge that causes severe backflow of electrons towards electrolyte (charge recombination). Herein, we demonstrate that gallium (Ga) doping can increase the band edge of SnO2, and we show that DSSCs using a Ga-doped SnO2 nano-cuboids based photoanode offer improved open circuit potential (∼0.74 V), fill factor (∼73.7%), and power conversion efficiency (∼4.05%). | URI: | https://hdl.handle.net/10356/82056 http://hdl.handle.net/10220/39752 |
ISSN: | 1944-8244 | DOI: | 10.1021/am403640s | Rights: | © 2013 American Chemical Society. This is the author created version of a work that has been peer reviewed and accepted for publication by ACS Applied Materials & Interfaces, American Chemical Society. It incorporates referee’s comments but changes resulting from the publishing process, such as copyediting, structural formatting, may not be reflected in this document. The published version is available at: [http://dx.doi.org/10.1021/am403640s]. | Fulltext Permission: | open | Fulltext Availability: | With Fulltext |
| Appears in Collections: | SCBE Journal Articles |
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| Gallium-doped Tin Oxide Nano-cuboids for Improved Dye Sensitized Solar Cell.pdf | 727.88 kB | Adobe PDF |  View/Open |
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