Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/82056
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dc.contributor.authorTeh, Jun Jieen
dc.contributor.authorTing, Siong Luongen
dc.contributor.authorLeong, Kam Chewen
dc.contributor.authorLi, Junen
dc.contributor.authorChen, Pengen
dc.date.accessioned2016-01-22T03:34:21Zen
dc.date.accessioned2019-12-06T14:45:36Z-
dc.date.available2016-01-22T03:34:21Zen
dc.date.available2019-12-06T14:45:36Z-
dc.date.issued2013en
dc.identifier.citationTeh, J. J., Ting, S. L., Leong, K. C., Li, J., & Chen, P. (2013). Gallium-Doped Tin Oxide Nano-Cuboids for Improved Dye Sensitized Solar Cell. ACS Applied Materials & Interfaces, 5(21), 11377-11382.en
dc.identifier.issn1944-8244en
dc.identifier.urihttps://hdl.handle.net/10356/82056-
dc.description.abstractTin dioxide (SnO2) is a potential candidate to replace conventional titanium dioxide (TiO2) in dye-sensitized solar cells (DSSCs) because of its wider bandgap and higher electron mobility. However, SnO2 suffers from low band edge that causes severe backflow of electrons towards electrolyte (charge recombination). Herein, we demonstrate that gallium (Ga) doping can increase the band edge of SnO2, and we show that DSSCs using a Ga-doped SnO2 nano-cuboids based photoanode offer improved open circuit potential (∼0.74 V), fill factor (∼73.7%), and power conversion efficiency (∼4.05%).en
dc.description.sponsorshipASTAR (Agency for Sci., Tech. and Research, S’pore)en
dc.format.extent18 p.en
dc.language.isoenen
dc.relation.ispartofseriesACS Applied Materials & Interfacesen
dc.rights© 2013 American Chemical Society. This is the author created version of a work that has been peer reviewed and accepted for publication by ACS Applied Materials & Interfaces, American Chemical Society. It incorporates referee’s comments but changes resulting from the publishing process, such as copyediting, structural formatting, may not be reflected in this document. The published version is available at: [http://dx.doi.org/10.1021/am403640s].en
dc.subjectdye sensitized solar cell; tin oxide; gallium doping; nano-cuboid; band edge; charge recombinationen
dc.titleGallium-Doped Tin Oxide Nano-Cuboids for Improved Dye Sensitized Solar Cellen
dc.typeJournal Articleen
dc.contributor.schoolSchool of Chemical and Biomedical Engineeringen
dc.identifier.doi10.1021/am403640sen
dc.description.versionAccepted versionen
item.grantfulltextopen-
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