Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/82166
Title: A CMOS Low-power Temperature-robust RSSI using Weak-inversion Limiting Amplifiers
Authors: Wang, Keping
Lei, Xuemei
Ma, Kaixue
Yeo, Kiat Seng
Cao, Xiang
Wang, Zhigong
Keywords: Low-power
CMOS
Issue Date: 2013
Source: Wang, K., Lei, X., Ma, K., Yeo, K. S., Cao, X., & Wang, Z. (2013). A CMOS Low-power Temperature-robust RSSI using Weak-inversion Limiting Amplifiers. Journal of Circuits, Systems, and Computers, 22(10), 1340034-.
Series/Report no.: Journal of Circuits, Systems and Computers
Abstract: This paper presents a low-power CMOS receiving signal strength indicator (RSSI). The main architecture of the circuit adopts a six-stage limiting amplifier (LA) in a logarithmic-linear form, which shows a good performance in weak signal detection. The RSSI achieves high tolerance to process, voltage, and temperature (PVT) variations by utilizing the unique nature of branch currents in a transconductance amplifier. The power consumption is decreased by using the weak-inversion LAs. Full-waveform current rectification and summation are employed in the RSSI circuit to achieve high precision while maintaining low power consumption. Measured results show that in the 1 kHz–50 MHz frequency range, the input dynamic range is wider than 70 dB within ±2 dB linearity error. The chip occupies an area of 0.7 mm2 × 0.3 mm2 using a 0.18-μm CMOS. It draws 1.3 mA from a 1.8 V supply.
URI: https://hdl.handle.net/10356/82166
http://hdl.handle.net/10220/41138
ISSN: 0218-1266
DOI: 10.1142/S0218126613400343
Rights: © 2013 World Scientific Publishing Company.
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:EEE Journal Articles

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